APT5025BN ADPOW | Alldatasheet

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TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 (VDS > ID (ON) x RDS (ON) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 1.0mA) THERMAL CHARACTERISTICS Symbol R θJC R θJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX 0.40 UNIT °C/W Symbol BV DSS ID (ON) R DS (ON) IDSS IGSS VGS (TH) MIN TYP MAX APT5025BN 500 APT5030BN 500 APT5025BN 23 APT5030BN 21 APT5025BN 0.25 APT5030BN 0.30 250 1000 ±100 UNIT Volts Amps Ohms µA nA Volts UNIT Volts Amps Volts Watts W/°C APT APT 5025BN 5030BN 500 500 23 21 92 84 ±30 310 2.48 -55 to 150 300 MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT5025BN 500V 23.0A 0.25 Ω APT5030BN 500V 21.0A 0.30 Ω N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV ® 050-5007 Rev C TO-247 USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 G D S

1.3 320 640 5.5 11 DYNAMIC CHARACTERISTICS Symbol C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.8Ω MIN TYP MAX 2380 2950 522 730 196 290 83 130 12.6 19 51 76 14 28 27 55 61 92 36 71 UNIT pF nC ns APT5025/5030BN Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Characteristic / Test Conditions / Part Number Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], dlS /dt = 100A/µs) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr UNIT Amps Volts ns µC Test Conditions / Part Number VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped UNIT Watts Amps SAFE OPERATING AREA CHARACTERISTICS 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein. 050-5007 Rev C ZθJC, THERMAL IMPEDANCE ( °C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 0.5 0.1 0.05 0.01 0.005 0.001 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D=0.5 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM