APT5016BFLL ADPOW | Alldatasheet

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ADVANCE TECHNICALINFORMATION Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 1mA) 050-7026 Rev - 2-2001 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 500 0.160 250 1000 ±100 APT5016 500 120 ±30 ±40 325 2.6 -55 to 150 300 1300 G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com TO-247 USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 D 3PAK BLL SLL APT5016BFLL APT5016SFLL 500V 30A 0.160 W Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 TM

  • Lower Input Capacitance • Increased Power Dissipation
  • Lower Miller Capacitance • Easier To Drive
  • Lower Gate Charge, Qg • TO-247 or Surface Mount D FREDFET FAST RECOVERY BODY DIODE

ADVANCE TECHNICALINFORMATION DYNAMIC CHARACTERISTICS APT5016 BFLL - SFLL 050-7026 Rev - 2-2001

1 Repetitive Rating: Pulse width limited by maximum junction3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L =2.89mH, RG = 25W, Peak IL = 30A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Drain Source Gate 5.45 (.215) BSC Dimensions in Millimeters and (Inches) 2-Plcs. 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC {2 Plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) Dimensions in Millimeters (Inches) Heat Sink (Drain) and Leads are Plated 3.81 (.150) 4.06 (.160) (Base of Lead) Drain (Heat Sink) 1.98 (.078) 2.08 (.082) Gate Drain Source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) Revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) Revised 4/18/95 D APT's devices are covered by one or more of the following U.S.patents:4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Q rr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 0.6W MIN TYP MAX 2800 570 UNIT pF nC ns MIN TYP MAX 120 1.3 Tj = 25°C 250 Tj = 125°C 500 Tj = 25°C 1.3 Tj = 125°C 4.5 Tj = 25°C 12 Tj = 125°C 18 THERMAL CHARACTERISTICS Symbol R qJC R qJA MIN TYP MAX 0.38 UNIT °C/W Characteristic Junction to Case Junction to Ambient