APT5010JVRU3 MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged
  • ISOTOP® Package (SOT-227)
  • Very low stray inductance
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Very rugged
  • Low profile
  • RoHS Compliant ISOTOP® Buck chopper MOSFET Power Module A DG S

APT5010JVRU3 – Rev 1 June, 2006 www.microsemi.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 500V Tj = 25°C 25 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V T j = 125°C 250 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 22A 100 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2.5mA 2 4 V IGS S Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 7410 Coss Output Capacitance 1050 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 390 pF Qg Total gate Charge 312 Qgs Gate – Source Charge 37 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 44A @ TJ=25°C 127 nC Td(on) Turn-on Delay Ti me 18 Tr Rise Time 16 Td(off) Turn-off Delay Time 54 Tf Fall Time VGS = 15V VBus = 250V ID = 44A @ TJ=25°C RG = 0.6Ω 5 ns Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF = 30A 1.6 1.8 IF = 60A 1.9 VF Diode Forward Voltage IF = 30A T j = 125°C 1.4 V VR = 600V T j = 25°C 250 IRM Maximum Reverse Leakage Current VR = 600V T j = 125°C 500 µA CT Junction Capacitance V R = 200V 44 pF Reverse Recovery Time IF=1A,VR=30V di/dt =100A/µs Tj = 25°C 23 Tj = 25°C 85 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 4 IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A Tj = 25°C 130 Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C 700 nC trr Reverse Recovery Time 70 ns Qrr Reverse Recovery Charge 1300 nC IRRM Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Tj = 125°C 30 A

APT5010JVRU3 – Rev 1 June, 2006 www.microsemi.com 3 – 7 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit MOSFET 0.28 RthJC Junction to Case Thermal Resistance Diode 1.21 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical MOSFET Performance Curve

APT5010JVRU3 – Rev 1 June, 2006 www.microsemi.com 4 – 7

APT5010JVRU3 – Rev 1 June, 2006 www.microsemi.com 5 – 7 Typical Diode Performance Curve

APT5010JVRU3 – Rev 1 June, 2006 www.microsemi.com 6 – 7

APT5010JVRU3 – Rev 1 June, 2006 www.microsemi.com 7 – 7 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. Source Gate Drain Anode