APT5010JVRU3 ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

D S Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 2.5mA) 050-5559 Rev A MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 500 0.100 250 ±100 APT5010JVRU3 500 176 ±30 ±40 450 3.6 -55 to 150 300 2500 APT5010JVRU3 500V 44A 0.100 Ω Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

  • Faster Switching • 100% Avalanche Tested
  • Lower Leakage • Popular SOT-227 Package
  • Single Die MOSFET & FRED • PFC "Buck" Configuration POWER MOS V ® SOT-227 G S A D ISOTOP ® "UL Recognized" CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com

td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 0.6Ω MIN TYP MAX 7410 1050 390 312 127 UNIT pF nC ns APT5010JVRU3 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 050-5559 Rev A Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dlS /dt = 100A/µs) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC MIN TYP MAX 176 1.3 620 14.7 ZθJC, THERMAL IMPEDANCE ( °C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.3 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01

1 Repetitive Rating: Pulse width limited by maximum junction3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 2.58mH, RG = 25Ω , Peak IL = 44A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL/PACKAGE CHARACTERISTICS Symbol R θJC R θJA VIsolation Torque MIN TYP MAX 0.28 2500 UNIT °C/W Volts lb•in Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations.

ZθJC, THERMAL IMPEDANCE ( °C/W) 2.0 1.0 0.5 0.1 0.05 0.01 0.005 MIN TYP MAX 50 65 155 155 41 0 7.5 15 100 300 400 200 UNIT nS Amps nC Volts A/µS Characteristic Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µS, VR = 30V, TJ = 25°C Reverse Recovery Time T J = 25°C IF = 30A, diF/dt = -240A/µS, VR = 350V T J = 100°C Forward Recovery Time T J = 25°C IF = 30A, diF/dt = 240A/µS, VR = 350V T J = 100°C Reverse Recovery Current T J = 25°C IF = 30A, diF/dt = -240A/µS, VR = 350V T J = 100°C Recovery Charge T J = 25°C IF = 30A, diF/dt = -240A/µS, VR = 350V T J = 100°C Forward Recovery Voltage T J = 25°C IF = 30A, diF/dt = 240A/µS, VR = 350V T J = 100°C Rate of Fall of Recovery Current T J = 25°C IF = 30A, diF/dt = -240A/µS, VR = 350V (See Figure 10) TJ = 100°C DYNAMIC CHARACTERISTICS Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Q rr1 Q rr2 Vfr1 Vfr2 diM/dt THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight Symbol R θJC R θJA W T MIN TYP MAX 0.90 1.06 UNIT °C/W oz. gm. APT5010JVRU3 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D=0.5 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5559 Rev A

0.5 IRRM

30µH D.U.T. +15v -15v Vr

0.75 IRRM

diF/dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IF - Forward Conduction Current IRRM - Peak Reverse Recovery Current. trr - Reverse Recovery Time Measured from Point of IF Q rr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Current Falling Through Zero to a Tangent Line { diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM . Figure 22, Diode Reverse Recovery Test Circuit and Waveforms Figure 23, Diode Reverse Recovery Waveform and Definitions Q rr = 1/2 (trr . IRRM ) 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Anode Drain Gate r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Source Changed 2/10/99 APT5010JVRU3 SOT-227 (ISOTOP® ) Package Outline 050-5559 Rev A APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 ISOTOP ® is a Registered Trademark of SGS Thomson. "UL Recognized" File No. E145592