APT5010JLLU3 ADPOW | Alldatasheet

Document overview

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Technical content

Features

/g183/g32Power MOS 7® MOSFETs - Low R DSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged /g183/g32ISOTOP ® Package (SOT-227) /g183/g32Very low stray inductance /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Very rugged /g183/g32Low profile ISOTOP® Buck chopper MOSFET Power Module A DG S

APT5010JLLU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 250µA 500 V VGS = 0V,VDS = 500V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V T j = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 23A 100 m/g87 VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2.5mA 3 5 V IGSS Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 4360 Coss Output Capacitance 894 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 60 pF Qg Total gate Charge 96 Qgs Gate – Source Charge 24 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 41A @ TJ=25°C 49 nC Td(on) Turn-on Delay Time 11 Tr Rise Time 15 Td(off) Turn-off Delay Time 25 Tf Fall Time Resistive switching @ 25°C VGS = 15V VBus = 250V ID = 41A @ TJ=25°C RG = 0.6/g87 3 ns Eon Turn-on Switching Energy /g117 543 Eoff Turn-off Switching Energy Inductive Switching @ 25°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω 509 µJ Eon Turn-on Switching Energy /g117 843 Eoff Turn-off Switching Energy Inductive Switching @ 125°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω 593 µJ /g117 Eon includes diode reverse recovery Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF = 30A 1.6 1.8 IF = 60A 1.9 VF Diode Forward Voltage IF = 30A T j = 125°C 1.4 V VR = 600V T j = 25°C 250 IRM Maximum Reverse Leakage Current VR = 600V T j = 125°C 500 µA CT Junction Capacitance V R = 200V 44 pF Reverse Recovery Time IF=1A,VR=30V di/dt =100A/µs Tj = 25°C 23 Tj = 25°C 85 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 4 IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A Tj = 25°C 130 Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C 700 nC trr Reverse Recovery Time 70 ns Qrr Reverse Recovery Charge 1300 nC IRRM Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Tj = 125°C 30 A

APT5010JLLU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 3 – 7 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit MOSFET 0.33 RthJC Junction to Case Diode 1.21 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical MOSFET Performance Curve

APT5010JLLU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 4 – 7

APT5010JLLU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 5 – 7 Typical Diode Performance Curve

APT5010JLLU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 6 – 7

APT5010JLLU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 7 – 7 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. ISOTOP® is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved. Source Gate Drain Anode