APT44F80B2 MICROSEMI | Alldatasheet

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Technical content

Thermal and Mechanical Characteristics Symbol Parameter Ratings Unit ID Continuous Drain Current @ TC = 25°C 47 AContinuous Drain Current @ TC = 100°C 29 IDM Pulsed Drain Current 1 173 VGS Gate - Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1980 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 24 A G D S Single die FREDFET TYPICAL APPLICATIONS

  • ZVS phase shifted and other full bridge
  • Half bridge
  • PFC and other boost converter
  • Buck converter
  • Single and two switch forward
  • Flyback

FEATURES

  • Fast switching with low EMI
  • Low trr for high reliability
  • Ultra low Crss for improved noise immunity
  • Low gate charge
  • Avalanche energy rated
  • RoHS compliant TO-264 T-Max® APT44F80B2 APT44F80L 800V, 47A, 0.21Ω Max trr ≤370ns APT44F80B2 APT44F80L Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. N-Channel FREDFET Symbol Characteristic Min Typ Max Unit PD Total Power Dissipation @ TC = 25°C - - 1135 W RθJC Junction to Case Thermal Resistance - - .11 °C/W RθCS Case to Sink Thermal Resistance, Flat, Greased Surface - .11 - TJ, TSTG Operating and Storage Junction Temperature Range -55 - 150 TL Soldering Temperature for 10 Seconds (1.6mm from case) - - 300 - 0.22 - oz - 6.2 - g Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw - - 10 in·lbf - - 1.1 N·m Microsemi Website - http://www.microsemi.com

Static Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S APT44F80B2_L Symbol Parameter Test Conditions Min Typ Max Unit VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 800 V ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient Reference to 25°C, ID = 250µA 0.87 V/°C RDS(on) Drain-Source On Resistance 3 VGS = 10V, ID = 24A 0.17 0.21 Ω VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID = 2.5mA 2.5 4 5 V ∆VGS(th)/∆TJ Threshold Voltage Temperature Coefficient -10 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 800V VGS = 0V TJ = 25°C 250 µA TJ = 125°C 1000 IGSS Gate-Source Leakage Current VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min Typ Max Unit gfs Forward Transconductance VDS = 50V, ID = 24A 43 S Ciss Input Capacitance VGS = 0V, VDS = 25V f = 1MHz 9330 pF Crss Reverse Transfer Capacitance 160 Coss Output Capacitance 930 Co(cr)

4 Effective Output Capacitance, Charge Related

VGS = 0V, VDS = 0V to 533V 440 Co(er)

5 Effective Output Capacitance, Energy Related 220

VGS = 0 to 10V, ID = 24A, VDS = 400V 305 nCQgs Gate-Source Charge 51 Qgd Gate-Drain Charge 155 td(on) Turn-On Delay Time Resistive Switching VDD = 400V, ID = 24A RG = 4.7Ω 6 , VGG = 15V ns tr Current Rise Time 75 td(off) Turn-Off Delay Time 230 tf Current Fall Time 70 Symbol Parameter Test Conditions Min Typ Max Unit IS Continuous Source Current (Body Diode) 47 A ISM Pulsed Source Current (Body Diode) 1 173 VSD Diode Forward Voltage ISD = 24A, TJ = 25°C, VGS = 0V 1.0 V trr Reverse Recovery Time ISD = 24A 3 diSD/dt = 100A/µs VDD = 100V TJ = 25°C 320 370 nS TJ = 125°C 590 710 Qrr Reverse Recovery Charge TJ = 25°C 1.91 μC TJ = 125°C 5.18 Irrm Reverse Recovery Current TJ = 25°C 12.1 A TJ = 125°C 18.1 dv/dt Peak Recovery dv/dt ISD ≤ 24A, di/dt ≤1000A/µs, VDD = 400V, TJ = 125°C

25 V/ns

diode (body diode)