APT43GA90B MICROSEMI | Alldatasheet
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Technical content
Thermal and Mechanical Characteristics Symbol Parameter Ratings Unit Vces Collector Emitter Voltage 900 V IC1 Continuous Collector Current @ TC = 25°C 78 AIC2 Continuous Collector Current @ TC = 100°C 43 ICM Pulsed Collector Current 1 129 VGE Gate-Emitter Voltage 2 ±30 V PD Total Power Dissipation @ TC = 25°C 337 W SSOA Switching Safe Operating Area @ T J = 150°C 129A @ 900V TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 TL Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 300 Single die IGBT TYPICAL APPLICATIONS
- ZVS phase shifted and other full bridge
- Half bridge
- High power PFC boost
- Welding
- UPS, solar, and other inverters
- High frequency, high effi ciency industrial
FEATURES
- Fast switching with low EMI
- Very Low E off for maximum effi ciency
- Ultra low C res for improved noise immunity
- Low conduction loss
- Low gate charge
- Increased intrinsic gate resistance for low EMI
- RoHS compliant APT43GA90B APT43GA90S 900V POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior effi ciency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Symbol Characteristic Min Typ Max Unit RθJC Junction to Case Thermal Resistance - - 0.37 °C/W Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 in·lbf Microsemi Website - http://www.microsemi.com High Speed PT IGBT Static Characteristics T J = 25°C unless otherwise specifi ed Symbol Parameter Test Conditions Min Typ Max Unit VBR(CES) Collector-Emitter Breakdown Voltage V GE = 0V, IC = 1.0mA 900 VVCE(on) Collector-Emitter On Voltage VGE = 15V, IC = 25A TJ = 25°C 2.5 3.1 TJ = 125°C 2.2 VGE(th) Gate Emitter Threshold Voltage V GE =VCE , IC = 1mA 3 4.5 6 ICES Zero Gate Voltage Collector Current VCE = 900V, VGE = 0V TJ = 25°C 250 μA TJ = 125°C 1000 IGES Gate-Emitter Leakage Current V GS = ±30V ±100 nA TO-247 G C E D3PAK G C E (S) (B)
Dynamic Characteristics T J = 25°C unless otherwise specifi ed 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. See Mil-Std-750 Method 3471 3 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 4 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a silicon carbide Schottky diode. 5 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. APT43GA90B_S Symbol Parameter Test Conditions Min Typ Max Unit Cies Input Capacitance Capacitance VGE = 0V, VCE = 25V f = 1MHz 2465 pF Coes Output Capacitance 227 Cres Reverse Transfer Capacitance 34 Qg
2 Total Gate Charge Gate Charge
VGE = 15V VCE= 450V IC = 25A 116 Qge Gate-Emitter Charge 18 nC Qgc Gate- Collector Charge SSOA Switching Safe Operating Area TJ = 150°C, RG = 4.7Ω, VGE = 15V, L= 100uH, VCE = 900V 129 A td(on) Turn-On Delay Time Inductive Switching (25°C) VCC = 600V VGE = 15V IC = 25A RG = 4.7Ω3 TJ = +25°C ns tr Current Rise Time 16 td(off) Turn-Off Delay Time 82 tf Current Fall Time 57 Eon1 Turn-On Switching Energy 875 μJ Eoff
5 Turn-Off Switching Energy 425
td(on Turn-On Delay Time Inductive Switching (125°C) VCC = 600V VGE = 15V IC = 25A RG = 4.7Ω3 TJ = +125°C ns tr Current Rise Time 16 td(off) Turn-Off Delay Time 117 tf Current Fall Time 129 Eon1 Turn-On Switching Energy 1660 μJ Eoff