APT41F100J MICROSEMI | Alldatasheet

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Thermal and Mechanical Characteristics G D S Single die FREDFET Unit A V mJ A Unit W °C/W V oz g in·lbf N·m Ratings 260 ±30 4075 Min Typ Max 960 0.13 0.15 -55 150 2500 1.03 29.2 1.1 Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Terminals and Mounting Screws. Symbol ID IDM VGS EAS IAR Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Torque TYPICAL APPLICATIONS

  • ZVS phase shifted and other full bridge
  • Half bridge
  • PFC and other boost converter
  • Buck converter
  • Single and two switch forward
  • Flyback

FEATURES

  • Fast switching with low EMI
  • Low t rr for high reliability
  • Ultra low C rss for improved noise immunity
  • Low gate charge
  • Avalanche energy rated
  • RoHS compliant SOT-227 ISOTOP® file # E145592 "UL Recognized" G S S D APT41F100J 1000V, 41A, 0.21Ω Max, trr ≤400ns APT19F100J Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Microsemi Website - http://www.microsemi.com 050-8128 Rev A 3-2007

Static Characteristics TJ = 25°C unless otherwise specified Dynamic Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 7.48mH, RG = 2.2Ω, IAS = 33A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -5.37E-7/VDS^2 + 9.48E-8/VDS + 1.83E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 1000 1.15 0.19 0.21 3 4 5 -10 250 1000 ±100 Min Typ Max 260 1.0 400 800 3.3 8.0 17.2 24.6 Min Typ Max 18500 245 1555 635 325 570 100 270 235 Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 33A VGS = VDS, ID = 5mA VDS = 1000V T J = 25°C VGS = 0V T J = 125°C VGS = ±30V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) ISD = 33A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 33A 3 T J = 25°C VDD = 100V T J = 125°C diSD/dt = 100A/µs T J = 25°C TJ = 125°C ISD ≤ 33A, di/dt ≤1000A/µs, VDD = 667V, TJ = 125°C Test Conditions VDS = 50V, ID = 33A VGS = 0V, VDS = 25V f = 1MHz VGS = 0V, VDS = 0V to 667V VGS = 0 to 10V, ID = 33A, VDS = 500V Resistive Switching VDD = 667V, ID = 33A RG = 2.2Ω 6 , VGG = 15V Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS Symbol IS ISM VSD trr Qrr Irrm dv/dt Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 050-8128 Rev A 3-2007 APT41F100J