APT41F100J ISC | Alldatasheet
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Technical content
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DESCRIPTION
- DrainCurrent-ID=41A@TC=25℃
- DrainSource Voltage -VDSS=1000V(Min)
- StaticDrain-Source On-Resistance -RDS(on) =0.21Ω(Max)@VGS= 10V
APPLICATIONS
- DC-DCconverter
- BatteryChargers
- Highspeed power switch ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage(VGS=0) 1000 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-continuous@TC=25℃ 41 A IDM PulseDrainCurrent 26 A PD TotalDissipation@TC=25℃ 960 W TJ Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.13 ℃/W D GS S SOT-227 package
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=0.25mA 1000 -- V IDSS ZeroGateVoltageDrainCurrent VDS=1000V;VGS=0 -- 250 uA IGSS Gate-BodyLeakageCurrent VGS= ±30V;VDS=0 -- ±100 nA VGS(th) GateThresholdVoltage VDS=VGS;ID=5mA 3 5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=33A -- 0.21 Ω VSD ForwardOn-Voltage IS=33A;VGS=0 -- 1.0 V PackageDimensions(UNIT:MM):
www.iscsemi.com 3 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose, nordoes ISCassumeanyliability arisingfrom theapplication oruse ofanyproducts, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.