APT40SM120B MICROSEMI | Alldatasheet

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1200V, 41A, 80mΩ Symbol Parameter Ratings Unit VDSS Drain Source Voltage 1200 V ID Continuous Drain Current @ TC = 25°C 41 AContinuous Drain Current @ TC = 100°C 29 IDM Pulsed Drain Current 1 100 VGS Gate-Source Voltage -10 to +25 V PD Total Power Dissipation @ TC = 25°C 273 W Linear Derating Factor 1.82 W/°C TO-247 Package APT40SM120B G D S

DESCRIPTION

FEATURES / TYPICAL APPLICATIONS MAXIMUM RATINGS THERMAL AND MECHANICAL CHARACTERISTICS Silicon Carbide N-Channel Power MOSFET Symbol Characteristic Min Typ Max Unit RθJC Junction to Case Thermal Resistance 0.36 0.55 °C/W Tj Operating Junction Temperature -55 175 °CTstg Storage Junction Temperature Range -55 150 TL Soldering Temperature for 10 Seconds (1.6mm from case) 260 Torque Mounting Torque (TO-247 Package), 6-32 or M3 screw 10 in·lbf

1.1 N·m

Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. SiC MOSFET Features:

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, Tj(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness SiC MOSFET Benefits:
  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external Free Wheeling Diode
  • Lower system cost of ownership Applications:
  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Symbol Parameter Test Conditions Min Typ Max Unit Ciss Input Capacitance VGS = 0V, VDD = 1000V f = 1MHz 2085 pFCrss Reverse Transfer Capacitance 25 Coss Output Capacitance 115 Qg Total Gate Charge VGS = 0/20V VDD= 800V ID = 20A 130 nCQgs Gate-Source Charge 19 Qgd Gate-Drain Charge 35 td(on) Turn-On Delay Time VDD = 800V VGS = 0/20V ID = 20A RG = 0.7 Ω 3 L = 115 µH Tc = 25°C Freewheeling Diode = APT10SCE120B ns tr Current Rise Time 6 td(off) Turn-Off Delay Time 32 tf Current Fall Time 16 Eon2 Turn-On Switching Energy 4 225 µJ Eoff Turn-Off Switching Energy 50 td(on) Turn-On Delay Time VDD = 800V VGS = 0/20V ID = 20A RG = 0.7 Ω 3 L = 115 µH Tc = 150°C Freewheeling Diode = APT10SCE120B ns tr Current Rise Time 6 td(off) Turn-Off Delay Time 36 tf Current Fall Time 17 Eon2 Turn-On Switching Energy 4 225 µJEoff Turn-Off Switching Energy 60 ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short 1.2 Ω SCWT Short Circuit Withstand Time VDS = 960V, VGS = 20V, TC = 25°C 5 µS EAS Avalanche Energy, Single Pulse VDS = 145V, VGS = 20V, ID = 20A, TC = 25°C 2500 mJ APT40SM120B TJ = 25°C unless otherwise specified STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA 1200 V RDS(on) Drain-Source On Resistance 2 VGS = 20V, ID = 20A 80 100 mΩ VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID = 1mA 1.7 3.0 V ∆VGS(th)/∆TJ Threshold Voltage Temperature Coefficient -4.8 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 1200V VGS = 0V TJ = 25°C 100 µA TJ = 125°C 500 IGSS Gate-Source Leakage Current VGS = +20V / -10V ±100 nA DYNAMIC CHARACTERISTICS TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit VSD Diode Forward Voltage ISD = 20A, VGS = 0V 3.8 V trr Reverse Recovery Time ISD = 20A, VDD = 800V dI/dt = -1000A/µs 90 ns Qrr Reverse Recovery Charge 265 nC Irrm Reverse Recovery Current 7.8 A Source-Drain Diode Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature

2 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 3 RG is total external gate resistance including internal gate driver impedance. 4 Eon2 includes energy of APT10SCE120B free wheeling diode.

VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7, Capacitance vs Drain-to-Source Voltage Coss Ciss Crss f = 1MHz VGS = 0V VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 8, Output Characteristics ID vs VGS Temperature ID ,CONTINUOUS DRAIN CURRENT A) −40 −35 −30 −25 −20 −15 −10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction IDS, REVERSE DRAIN CURRENT (A) TJ = 25°C -5 VGS -4 VGS -3 VGS -2 VGS -1 VGS

0 VGS

−40 −35 −30 −25 −20 −15 −10 −40 −35 −30 −25 −20 −15 −10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction IDS, REVERSE DRAIN CURRENT (A) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction IDS, REVERSE DRAIN CURRENT (A) TJ = 150°C TJ = 125°C C, CAPACITANCE (pF) TJ= 150°C TJ= 125°C TJ= 75°C TJ= 25°C TJ= 175°C TJ= 50°C TJ= 100°C 0.9 0.95 1.05 1.1 −50 −25 02 55 07 5 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Breakdown Voltage vs Temperature V(BR)DSS, BREAKDOWN VOLTAGE (V) (NORMALIZED TO 25°C) -5 VGS -4 VGS -3 VGS -2 VGS -1 VGS -5 VGS -4 VGS -3 VGS -2 VGS -1 VGS ID = 1mA

0.1 100 200 1 10 100 1000 2000 10ms 100µs 100ms/DC 1ms VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 14, Forward Safe Operating Area ID, DRAIN CURRENT (A) 10µs RDS(on) TJ = 175°C TC = 100°C APT40SM120B 0.1 0.2 0.3 0.4 0.5 0.6 -4 10-3 10-2 0.1 1 10-5 ZθJC, THERMAL IMPEDANCE (°C/W) 0.3 D = 0.9 0.7 SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) Figure 15, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 0.5 0.1

0.05 Peak T J = P DM x Z θJC + T C

Duty Factor D = t1/t2 P DM Note : TO-247 (B) Package Outline Dimensions in Millimeters (Inches) 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drai n Drai n Source Gate 5.45 (.215) BSC 2-Plcs. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 −50 −25 02 55 07 5 100 125 150 175 ID = 1mA TJ, JUNCTION TEMPERATURE (°C) Figure 13, Threshold Voltage vs Temperature VGS(th), THRESHOLD VOLTAGE (V) (NORMALIZED TO 25°C)

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