APT40N60JCU3 MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Ul tra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
  • ISOTOP® Package (SOT-227)
  • Very low stray inductance
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS Compliant ISOTOP® Buck chopper Super Junction MOSFET Power Module A DG S

APT40N60JCU3 – Rev 1 June, 2006 www.microsemi.com 2 - 8 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C 25 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V T j = 125°C 250 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 20A 70 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 1mA 2.1 3 3.9 V IGS S Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 7015 Coss Output Capacitance 2565 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 212 pF Qg Total gate Charge 259 Qgs Gate – Source Charge 29 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 40A 111 nC Td(on) Turn-on Delay Ti me 20 Tr Rise Time 30 Td(off) Turn-off Delay Time 115 Tf Fall Time Resistive Switching VGS = 15V VBus = 380V ID = 40A RG = 1.8Ω 10 ns Eon Turn-on Switchi ng Energy 670 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 40A, RG = 5Ω 980 µJ Eon Turn-on Switchi ng Energy 1100 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 40A, RG = 5Ω 1206 µJ

APT40N60JCU3 – Rev 1 June, 2006 www.microsemi.com 3 - 8 Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF = 30A 1.6 1.8 IF = 60A 1.9 VF Diode Forward Voltage IF = 30A T j = 125°C 1.4 V VR = 600V T j = 25°C 250 IRM Maximum Reverse Leakage Current VR = 600V T j = 125°C 500 µA CT Junction Capacitance V R = 200V 44 pF Reverse Recovery Time IF=1A,VR=30V di/dt =100A/µs Tj = 25°C 23 Tj = 25°C 85 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 4 IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A Tj = 25°C 130 Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C 700 nC trr Reverse Recovery Time 70 ns Qrr Reverse Recovery Charge 1300 nC IRRM Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Tj = 125°C 30 A Thermal and package characteristics Symbol Characteristic Min Typ Max Unit CoolMos 0.43 RthJC Junction to Case Thermal Resistance Diode 1.21 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration

APT40N60JCU3 – Rev 1 June, 2006 www.microsemi.com 4 - 8 25 50 75 100 125 150 T C, Ca se Temperature (°C) ID, DC Drain Current (A) Figure 6, DC Drain Current vs Case Temperature

APT40N60JCU3 – Rev 1 June, 2006 www.microsemi.com 5 - 8

APT40N60JCU3 – Rev 1 June, 2006 www.microsemi.com 6 - 8 Typical Diode Performance Curve

APT40N60JCU3 – Rev 1 June, 2006 www.microsemi.com 7 - 8

APT40N60JCU3 – Rev 1 June, 2006 www.microsemi.com 8 - 8 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. Source Gate Drain Anode