APT40N60JCU2

APT40N60JCU2 ADPOW | Alldatasheet

Document overview

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Technical content

Features

/g183/g32 - Ultra low R DSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated /g183/g32ISOTOP ® Package (SOT-227) /g183/g32Very low stray inductance /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Stable temperature behavior /g183/g32Very rugged /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Easy paralleling due to positive TC of VCEsat ISOTOP® Boost chopper Super Junction MOSFET Power Module K DG S

APT40N60JCU2 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 2 – 8 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 250µA 600 V VGS = 0V,VDS = 600V Tj = 25°C 25 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V T j = 125°C 250 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 20A 70 m/g87 VGS(th) Gate Threshold Voltage V GS = VDS, ID = 1mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 7015 Coss Output Capacitance 2565 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 212 pF Qg Total gate Charge 259 Qgs Gate – Source Charge 29 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 40A 111 nC Td(on) Turn-on Delay Time 20 Tr Rise Time 30 Td(off) Turn-off Delay Time 115 Tf Fall Time Resistive Switching VGS = 15V VBus = 380V ID = 40A RG = 1.8/g87 10 ns Eon Turn-on Switching Energy /g117 670 Eoff Turn-off Switching Energy /g118 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 40A, RG = 5Ω 980 µJ Eon Turn-on Switching Energy /g117 1100 Eoff Turn-off Switching Energy /g118 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 40A, RG = 5Ω 1206 µJ /g117 Eon includes diode reverse recovery /g118 In accordance with JEDEC standard JESD24-1.

APT40N60JCU2 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 3 – 8 Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF = 30A 1.6 1.8 IF = 60A 1.9 VF Diode Forward Voltage IF = 30A T j = 125°C 1.4 V VR = 600V T j = 25°C 250 IRM Maximum Reverse Leakage Current VR = 600V T j = 125°C 500 µA CT Junction Capacitance V R = 200V 44 pF Reverse Recovery Time IF=1A,VR=30V di/dt =100A/µs Tj = 25°C 23 Tj = 25°C 85 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 4 IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A Tj = 25°C 130 Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C 700 nC trr Reverse Recovery Time 70 ns Qrr Reverse Recovery Charge 1300 nC IRRM Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Tj = 125°C 30 A Thermal and package characteristics Symbol Characteristic Min Typ Max Unit CoolMos 0.43 RthJC Junction to Case Diode 1.21 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration

APT40N60JCU2 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 4 – 8 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) Figure 6, DC Drain Current vs Case Temperature

APT40N60JCU2 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 5 – 8

APT40N60JCU2 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 6 – 8 Typical Diode Performance Curve

APT40N60JCU2 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 7 – 8

APT40N60JCU2 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 8 – 8 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. ISOTOP® is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved. Source Gate Drain Cathode