APT40N60B2CFG

APT40N60B2CF ADPOW | Alldatasheet

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FINAL DATA SHEET WITH MOS 7 FORMAT 600V 40A 0.110Ω APT40N60B2CF APT40N60LCF APT40N60B2CFG* APT40 N60LCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 20A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2mA) Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C) Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS V GS(th) UNIT Volts Ohms µA nA Volts APT40N60B2CF(G)_LCF(G) 600 ±30 417 3.33 -55 to 150 260 690

• Ultra Low R DS(ON) • Intrinsic Fast-Recovery Body Diode
• Low Miller Capacitance • Extreme Low Reverse Recovery Charge
• Ultra Low Gate Charge, Q g • Ideal For ZVS Applications
• Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package
• Extreme dv/dt Rated Super Junction FREDFET MIN TYP MAX 600 0.110 4.2 3400 ±100 3 4 5 APT Website - http://www.advancedpower.com C Power Semiconductors OO LM OS G D S "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade- mark of Infineon Technologies AG." T-MaxTM TO-264

DYNAMIC CHARACTERISTICS APT40N60B2CF(G)_LCF(G) SINGLE PULSE ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.5 0.1 0.3 0.7 0.9 0.05 FINAL DATA SHEET WITH MOS 7 FORMAT Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 PDM Note: SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -40A) Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -40A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -40A, di/dt = 100A/µs) Peak Recovery Current (IS = -40A, di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps MIN TYP MAX 2.4 195 290 1.8 3.5 Symbol RθJC RθJA MIN TYP MAX 0.30 UNIT °C/W Characteristic Junction to Case Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein. Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 40A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 40A @ 25°C RG = 1.8Ω INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 40A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 40A, RG = 5Ω 4 Starting Tj = +25°C, L = 13.80mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID40A di/dt ≤ 700A/µs VR ≤ 480V TJ ≤125°C 6 Eon includes diode reverse recovery. See figures 18, 20.

7 Repetitive avalanche causes additional power losses that can be calcu-

lated as PAV = EAR*f MIN TYP MAX 5040 1365 185 115 6.4 725 365 1195 440 UNIT pF nC ns µJ