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Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 46.5A) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) 050-5892 Rev A 7-2004 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 400 0.035 250 1000 ±100 APT40M35JVFR 400 372 ±30 ±40 700 5.6 -55 to 150 300 3600 APT40M35JVFR 400V 93A 0.035 ΩΩΩΩΩ G D S SOT-227 G S S D ISOTOP® "UL Recognized" CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout.

  • Faster Switching • Avalanche Energy Rated
  • Lower Leakage •
  • Popular SOT-227 Package FAST RECOVERY BODY DIODE POWER MOS V® FREDFET

DYNAMIC CHARACTERISTICS APT40M35JVFR 050-5892 Rev A 7-2004

1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 0.83mH, RG = 25Ω, Peak IL = 93A 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 IS ≤ ID = 93A, di/dt = 100A/µs, Tj ≤ 150°C, RG = 2.0Ω VR = 400V. APT Reserves the right to change, without notice, the specifications and information contained herein. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = - 93A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -93A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -93A, di/dt = 100A/µs) Peak Recovery Current (IS = -93A, di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 93A @ 25°C VGS = 15V VDD = 200V ID = 93A @ 25°C RG = 0.6Ω MIN TYP MAX 16800 20160 2400 3360 1070 1605 710 1065 80 120 340 510 20 40 30 60 75 115 14 28 UNIT pF nC ns MIN TYP MAX 372 1.3 Tj = 25°C 300 Tj = 125°C 600 Tj = 25°C 2.2 Tj = 125°C 9 Tj = 25°C 16 Tj = 125°C 33 THERMAL/PACKAGE CHARACTERISTICS Symbol RθJC RθJA VIsolation Torque MIN TYP MAX 0.18 2500 UNIT °C/W Volts lb•in Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.2 0.1 0.05 0.01 0.005 0.001 0.0005 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01