APT40GT60BRG MICROSEMI | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
- Low Forward Voltage Drop
- Low Tail Current
- RoHS Compliant
- RBSOA and SCSOA Rated
- High Frequency Switching to 150KHz
- Ultra Low Leakage Current TO-247 G C E G C E
Dynamic Characteristic APT40GT60BR Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance VGE = 0V, VCE = 25V f = 1MHz - 2190 - pFCoes Output Capacitance - 220 - Cres Reverse Transfer Capacitance - 130 - VGEP Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V VCE= 300V IC = 40A - 8.0 - V Qg Total Gate Charge 3 - 200 - nCQge Gate-Emitter Charge - 12 - Qgc Gate-Collector Charge - 86 - SSOA Switching Safe Operating Area TJ = 150°C, RG = 5Ω , VGE = 15V, L = 100μH, VCE= 600V 160 A td(on) Turn-On Delay Time Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 40A RG = 5Ω TJ = +25°C -1 2 - ns tr Current Rise Time - 36 - td(off) Turn-Off Delay Time - 124 - tf Current Fall Time - 55 - Eon1 Turn-On Switching Energy 4 -- - μJEon2 Turn-On Switching Energy 5 - 945 - Eoff Turn-Off Switching Energy 6 - 828 - td(on) Turn-On Delay Time Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 40A RG = 5Ω TJ = +125°C -1 2 - ns tr Current Rise Time - 33 - td(off) Turn-Off Delay Time - 165 - tf Current Fall Time - 58 - Eon1 Turn-On Switching Energy 4 -- - μJEon2 Turn-On Switching Energy 5 - 1342 - Eoff Turn-Off Switching Energy 6 - 1150 - Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case (IGBT) - - 0.36 °C/W RθJC Junction to Case (DIODE) - - N/A Torque Terminals and Mounting Screws - - 10 in·lbf - - 1.1 N·m VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 - - Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 R G is external gate resistance not including gate driver impedance. Thermal and Mechanical Characteristics Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.