APT40GT60BR ADPOW | Alldatasheet
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G C E MIN TYP MAX 600 -15 345 1.6 2.0 2.5 2.8 2000 ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA) Gate Threshold Voltage (VCE = VGE , IC = 500µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = IC2 , Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = IC2 , Tj = 150°C) Collector Cut-off Current (VCE = VCES , VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES , VGE = 0V, Tj = 150°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) Symbol BV CES RBV CES VGE (TH) VCE (ON) ICES IGES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS UNIT Volts µA nA Symbol VCES VCGR VEC VGE IC1 IC2 ICM1 ICM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20KΩ ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Pulsed Collector Current 1 @ TC = 110°C Single Pulse Avalanche Energy 2 Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT40GT60BR 600 600 ±20 160 350 -55 to 150 300 UNIT Volts Amps mJ Watts 052-6222 Rev - APT40GT60BR 600V 80A The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
- Low Forward Voltage Drop • High Freq. Switching to 150KHz
- Low Tail Current • Ultra Low Leakage Current
- Avalanche Rated • RBSOA and SCSOA Rated Thunderbolt IGBT™ TO-247 G C E CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com
td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe DYNAMIC CHARACTERISTICS APT40GT60BR UNIT °C/W lb•in MIN TYP MAX 0.36 Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw Symbol R Θ JC R Θ JA Torque THERMAL CHARACTERISTICS Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance Test Conditions Capacitance V GE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES IC = IC2 Resistive Switching (25°C) VGE = 15V VCC = 0.8VCES IC = IC2 R G = 10Ω Inductive Switching (150°C) VCLAMP (Peak) = 0.66VCES VGE = 15V IC = IC2 R G = 10Ω TJ = +150°C Inductive Switching (25°C) VCLAMP (Peak) = 0.66VCES VGE = 15V IC = IC2 R G = 10Ω TJ = +25°C VCE = 20V, IC = IC2 MIN TYP MAX 2200 220 130 190 115 125 190 1.5 0.9 2.4 160 1.8 UNIT pF nC ns ns mJ ns mJ S 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = IC2 , VCC = 50V, R GE = 25Ω , L = 200µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6222 Rev -