DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.

  • Low Conduction Loss • 100 kHz operation @ 400V, 41A
  • Low Gate Charge • 200 kHz operation @ 400V, 26A
  • Ultrafast Tail Current shutoff • SSOA rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com STATIC ELECTRICAL CHARACTERISTICS MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 250 2500 ±100 Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts µA nA Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL APT40GP60B_S 600 ±20 ±30 100 160 160A @ 600V 543 -55 to 150 300 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 @ TC = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ T J = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. G C E Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) POWER MOS 7 IGBT APT40GP60B APT40GP60S 600V TO-247 G C E D3PAK G C E

APT40GP60B_SDYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V IC = 40A TJ = 150°C, RG = 5Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC(Peak) = 400V VGE = 15V IC = 40A RG = 5Ω TJ = +25°C Inductive Switching (125°C) VCC(Peak) = 400V VGE = 15V IC = 40A RG = 5Ω TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching SOA Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 MIN TYP MAX 4610 395 7.5 135 160 385 644 352 450 385 972 615 950 UNIT pF V nC A ns µJ ns µJ UNIT °C/W gm MIN TYP MAX .23 N/A 5.90 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Symbol RΘ JC RΘ JC WT THERMAL AND MECHANICAL CHARACTERISTICS 1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I ces includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471. on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure24.) 5E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switchi ng loss. A Combi device is used for the clamping diode as shown in the E on2 test circuit. (See Figures 21, 22.) 6E off is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein.