APT40GF120JRDQ2 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Darel Bidwell
- PDF pages: 9
Technical content
APT40GF120JRDQ2TYPICAL PERFORMANCE CURVES The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
- Low Forward Voltage Drop • High Freq. Switching to 20KHz
- RBSOA and SCSOA Rated • Ultra Low Leakage Current
- Ultrafast Soft Recovery Anti-parallel Diode
- Intergrated Gate Resistor: Low EMI, High Reliability FAST IGBT & FRED SOT-227 ISOTOP® file # E145592 "UL Recognized" G E E C C E G 1200V APT40GF120JRDQ2 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA) Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Units Volts µA nA Ω Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG APT40GF120JRDQ2 1200 ±30 150 150A @ 1200V 347 -55 to 150 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 1200 4.5 5.5 6.5 2.5 3.0 3.1 200 1500 ±100 Microsemi Website - http://www.microsemi.com
APT40GF120JRDQ2DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V IC = 50A TJ = 150°C, RG = 1.0Ω, 7 VGE = 15V, L = 100µH,VCE = 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V IC = 50A RG = 1.0Ω 7 TJ = +25°C Inductive Switching (125°C) VCC = 800V VGE = 15V IC = 50A RG = 1.0Ω 7 TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (WithDiode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (WithDiode) 55 Turn-off Switching Energy 6 MIN TYP MAX 3460 385 225 9.5 340 205 150 260 3600 4675 2640 300 3750 6400 3400 UNIT pF V nC A ns µJ ns µJ 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 R G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Mircosemi Reserves the right to change, without notice, the specifications and information contained herein. THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W Volts oz gm Ib•in N•m MIN TYP MAX 0.36 1.1 2500 1.03 29.2 1.1 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque Symbol RθJC RθJC VIsolation WT Torque
for either Emitter/Anode terminal. diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 32. Diode Test Circuit