APT40GF120JRD

APT40GF120JRD ADPOW | Alldatasheet

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G C E 052-6256 Rev A APT40GF120JRD 1200V 60A The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT™ combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode Fast IGBT & FRED SOT-227 G E E C ISOTOP ® "UL Recognized" PRELIMINAR Y APT40GF120JRD 1200 1200 ±20 120 390 -55 to 150 300 MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified. MIN TYP MAX 1200 4.5 5.5 6.5 2.9 3.4 3.5 4.1 0.8 TBD ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA) Gate Threshold Voltage (VCE = VGE , IC = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) Collector Cut-off Current (VCE = VCES , VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = VCES , VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) Symbol BV CES VGE (TH) VCE (ON) ICES IGES STATIC ELECTRICAL CHARACTERISTICS (IGBT) UNIT Volts mA nA Symbol VCES VCGR VGE IC1 IC2 ICM1 ICM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20KΩ ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current 1 @ TC = 25°C Pulsed Collector Current 1 @ TC = 90°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. UNIT Volts Amps Watts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com

Y Symbol C ies C oes C res Q g Q ge Q gc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe DYNAMIC CHARACTERISTICS (IGBT) APT40GF120JRD UNIT °C/W oz gm lb•in N•m MIN TYP MAX 0.32 0.66 1.03 29.2 1.1 Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient Package Weight Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) Symbol R Θ JC R Θ JA W T Torque THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES IC = IC2 Resistive Switching (25°C) VGE = 15V VCC = 0.8VCES IC = IC2 R G = 5Ω Inductive Switching (150°C) VCLAMP (Peak) = 0.66VCES VGE = 15V IC = IC2 R G = 5Ω TJ = +150°C Inductive Switching (25°C) VCLAMP (Peak) = 0.66VCES VGE = 15V IC = IC2 R G = 5Ω TJ = +25°C VCE = 20V, IC = IC2 MIN TYP MAX 3500 4700 490 700 230 345 320 200 130 215 145 400 140 4.5 5.0 9.5 100 340 105 8.0 UNIT pF nC ns ns mJ ns mJ S 052-6256 Rev A Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses 4 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Leakages include the FRED and IGBT.

3 See MIL-STD-750 Method 3471

4 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein.

Y Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 60°C, Duty Cycle = 0.5) RMS Forward Current Non-Repetitive Forward Surge Current (T J = 45°C, 8.3mS) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions IF = 60A Maximum Forward Voltage I F = 120A IF = 60A, TJ = 150°C STATIC ELECTRICAL CHARACTERISTICS (FRED) UNIT Volts Amps UNIT Volts MIN TYP MAX 2.5 2.0 2.0 APT40GF120JRD 1200 100 540 MAXIMUM RATINGS (FRED) All Ratings: T C = 25°C unless otherwise specified. ULTRAFAST SOFT RECOVERY PARALLEL DIODE MIN TYP MAX 70 85 130 170 170 18 30 29 40 630 1820 900 600 UNIT ns Amps nC Volts A/µs Characteristic Reverse Recovery Time, IF = 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time T J = 25°C IF = 60A, diF/dt = -480A/µs, VR = 650V T J = 100°C Forward Recovery Time T J = 25°C IF = 60A, diF/dt = 480A/µs, VR = 650V T J = 100°C Reverse Recovery Current T J = 25°C IF = 60A, diF/dt = -480A/µs, VR = 650V T J = 100°C Recovery Charge T J = 25°C IF = 60A, diF/dt = -480A/µs, VR = 650V T J = 100°C Forward Recovery Voltage T J = 25°C IF = 60A, diF/dt = 480A/µs, VR = 650V T J = 100°C Rate of Fall of Recovery Current T J = 25°C IF = 60A, diF/dt = -480A/µs, VR =650V T J = 100°C DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Q rr1 Q rr2 Vfr1 Vfr2 diM/dt

Y PRELIMINAR Y APT40GF120JRD 052-6256 Rev A SOT-227 (ISOTOP® ) Package Outline PEARSON 411 CURRENT TRANSFORMER

0.5 IRRM

30µH D.U.T. +15v -15v Vr

0.75 IRRM

diF/dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IF - Forward Conduction Current IRRM - Peak Reverse Recovery Current. trr - Reverse Recovery Time Measured from Point of IF Q rr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Current Falling Through Zero to a Tangent Line { diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM . Figure 25, Diode Reverse Recovery Test Circuit and Waveforms Figure 8, Diode Reverse Recovery Waveform and Definitions Q rr = 1/2 (trr . IRRM ) 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Emitter Collector Gate r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Emitter Source terminals are shorted internally. Current handling capability is equal for either Source terminal.