APT40DS04HJ MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Ultra fast recovery times
  • Soft recovery characteristics
  • High current
  • Very low stray inductance
  • High level of integration
  • ISOTOP® Package (SOT-227) Benefits
  • Outstanding performance at high frequency operation
  • Low losses
  • Low noise switching
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS Compliant ISOTOP® Schottky Diode Full Bridge Power Module

APT40DS04HJ – Rev 0 November, 2009 www.microsemi.com 2-3 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 20 IR Reverse Current V R = 45V Tj = 125°C 200 mA Tj = 25°C 0.58 VF Forward Voltage I F = 40A Tj = 125°C 0.48 V Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal resistance 1.1 RthJA Junction to Ambient 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) 3.30 (.130) 4.57 (.180)

APT40DS04HJ – Rev 0 November, 2009 www.microsemi.com 3-3 Typical Performance Curve maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.2 0.4 0.6 0.8 1.2 Rectangular Pulse Duration in Seconds Thermal Impedance (°C/W) Forward Characteristic TJ=25°C TJ=125°C V F (V) IF (A) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.