APT4020BVFR ADPOW | Alldatasheet

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Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 050-5635 Rev B 3-2006 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 400 0.20 250 ±100 APT4020B_SVFR(G) 400 ±30 ±40 250 -55 to 150 300 960 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout.

  • Faster Switching • Avalanche Energy Rated
  • Lower Leakage • TO-247 or Surface Mount D 3Pak
  • Fast Recovery Body Diode CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com BVFR SVFR FREDFETPOWER MOS V® G D S APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. 400V 23A 0.20ΩΩΩΩΩ

DYNAMIC CHARACTERISTICS APT4020B_SVFR(G) 050-5635 Rev B 3-2006 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -23A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -23A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -23A, di/dt = 100A/µs) Peak Recovery Current (IS = -23A, di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol Ciss Coss Crss Qg Qgs Qgd td(on) t r td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 23A @ 25°C VGS = 15V VDD = 200V ID = 23A @ 25°C RG = 1.6Ω MIN TYP MAX 2650 400 180 120 UNIT pF nC ns MIN TYP MAX 1.3 Tj = 25°C ? Tj = 125°C ? Tj = 25°C ? Tj = 125°C ? Tj = 25°C ? Tj = 125°C ? THERMAL CHARACTERISTICS Symbol RθJC RθJA MIN TYP MAX 0.50 UNIT °C/W Characteristic Junction to Case Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 3.63mH, RG = 25Ω, Peak IL = 23A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5d v /dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID[Cont.] di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.5 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01