APT4012BVFR ADPOW | Alldatasheet
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Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 050-7271 Rev B 1-2006 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 400 0.12 250 1000 ±100 APT4012BVFR_SVFR 400 148 ±30 ±40 370 2.96 -55 to 150 300 1300 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout.
- Faster Switching • Avalanche Energy Rated
- Lower Leakage • TO-247 or Surface Mount D 3Pak
- Fast Recovery Body Diode G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com APT4012BVFR APT4012SVFR 400V 37A 0.120 ΩΩΩΩΩ TO-247 D3PAK BVFR SVFR FREDFETPOWER MOS V®
DYNAMIC CHARACTERISTICS APT4012BVFR_SVFR 050-7271 Rev B 1-2006 ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.4 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -37A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -37A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -37A, di/dt = 100A/µs) Peak Recovery Current (IS = -37A, di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol Ciss Coss Crss Qg Qgs Qgd td(on) t r td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 37A @ 25°C VGS = 15V VDD = 200V ID = 37A @ 25°C RG = 1.6Ω MIN TYP MAX 4500 690 290 195 UNIT pF nC ns MIN TYP MAX 148 1.3 Tj = 25°C 250 Tj = 125°C 525 Tj = 25°C 1.6 Tj = 125°C 6.0 Tj = 25°C 13 Tj = 125°C 21 THERMAL CHARACTERISTICS Symbol RθJC RθJA MIN TYP MAX 0.34 UNIT °C/W Characteristic Junction to Case Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting Tj = +25°C, L = 1.90mH, RG = 25Ω, Peak IL = 37A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5d v /dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID[Cont.] di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein.