APT30DQ60BHB_V01 THINKISEMI | Alldatasheet

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Technical content

APT30DQ60BHB/APT30DQ60BHBG 2*30A/600V Heatsink Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE APT30DQ60BHB/APT30DQ60BHBG using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. APT30DQ60BHB/APT30DQ60BHBG © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.11T TO-3PN/TO-3PB-SQ Bottom Side Metal Heat Sink Internal Configuration Positive Negative Doubler Common Cathode Backside Backside Backside Common Anode Suffix "CT" Tandem Polarity Backside Series Tandem Polarity Suffix "CA" Suffix "CD" Suffix "HB" Base Base Base Base Suffix "CTG" Suffix "CAG" Suffix "CDG" Suffix "HBG" APT30DQ60BHB/APT30DQ60BHBG MAXIMUM RATINGS All Ratings per diode: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol V F I RM C T UNIT Volts μA pF MIN TYP MAX 2.0 2.4 2.4 1.7 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, V R = 200V I F = 30A I F = 60A I F = 30A, T J = 125°C V R = 600V V R = 600V, T J = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 67°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol V R V RRM V RWM I F(AV) I F(RMS) I FSM E AVL T J STG T L UNIT Volts Amps mJ 600 320 -55 to 175 300

© 1995 Thinki Semiconductor Co., Ltd. /dt - Rate of Diode Current Change Through Zero Crossing.

  • Maximum Reverse Recovery Current.

Figure 9. Diode Test Circuit

0.25 IRRM

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.11T Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.50 2.00 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 Package Outline THINKI TO-3PN/TO-3PB-SQ APT30DQ60BHB/APT30DQ60BHBG