APT30DQ60BHB MICROSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
- Low Losses
- Low Noise Switching
- Cooler Operation
- Higher Reliability Systems
- Increased System Power Density PRODUCT FEATURES
- Ultrafast Recovery Times
- Soft Recovery Characteristics
- Popular TO-247 Package or Surface Mount D
- Low Forward Voltage
- Low Leakage Current
- Avalanche Energy Rated PRODUCT APPLICATIONS
- Anti-Parallel Diode -Switchmode Power Supply -Inverters
- Free Wheeling Diode -Motor Controllers -Converters -Inverters
- Snubber Diode
- PFC
- RoHS Compliant ULTRAFAST SOFT RECOVERY RECTIFIER DIODE *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings per diode: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol VF IRM CT UNIT Volts μA pF MIN TYP MAX 2.0 2.4 2.4 1.7 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, VR = 200V IF = 30A IF = 60A IF = 30A, TJ = 125°C VR = 600V VR = 600V, TJ = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 67°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL UNIT Volts Amps mJ APT30DQ60BHB(G) 600 320 -55 to 175 300 APT30DQ60BHB APT30DQ60BHB(G) 600V 2X30A 1 - Cathode 1 2 - Anode 1 Cathode 2 3 - Anode 2 TO-247 1 2 3
APT30DQ60BHB(G)DYNAMIC CHARACTERISTICS 052-6321 Rev A 1-2009 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL MIN TYP MAX - 23 - 30 - 55 - 3 - - 175 - 485 - 6 - - 75 - 855 - 22 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol t rr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 25°C IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 125°C IF = 30A, diF/dt = -1000A/μs VR = 400V, TC = 125°C IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight Maximum Mounting Torque Symbol RθJC WT Torque MIN TYP MAX 1.5 0.22 5.9 1.1 UNIT °C/W oz g lb•in N•m Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10-5 10-4 10-3 10-2 0.1 1 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Peak TJ = PDM x ZθJC TC Duty Factor D = t1/t2 PDM Note: ZθJC, THERMAL IMPEDANCE (°C/W) Dissipated Power (Watts) TJ (°C) T C (°C) ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ZEXT 0.481 1.019 0.0023 0.0531
diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 9. Diode Test Circuit
0.25 IRRM
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