APT30DQ60BHB THINKISEMI | Alldatasheet

Document overview

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Technical content

60Amperes,600Volts Series Connection Ultra Fast Recovery Epitaxial Diodes Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE APT30DQ60BHB using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. APT30DQ60BHB © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.10T TO-3PN/TO-3PB Bottom Side Metal Heat Sink Internal Configuration Positive Negative Doubler Common Cathode Backside Backside Backside Common Anode Suffix "CT" Tandem Polarity Backside Series Tandem Polarity Suffix "CA" Suffix "CD" Suffix "HB" Base Base Base Base MAXIMUM RATINGS All Ratings per diode: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol V F I RM C T UNIT Volts μA pF MIN TYP MAX 2.0 2.4 2.4 1.7 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, V R = 200V I F = 30A I F = 60A I F = 30A, T J = 125°C V R = 600V V R = 600V, T J = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 67°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol V R V RRM V RWM I F(AV) I F(RMS) I FSM E AVL T J STG T L UNIT Volts Amps mJ APT30DQ60BHB 600 320 -55 to 175 300

© 1995 Thinki Semiconductor Co., Ltd. /dt - Rate of Diode Current Change Through Zero Crossing.

  • Maximum Reverse Recovery Current.

Figure 9. Diode Test Circuit

0.25 IRRM

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.10T

Package Information

Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.50 2.00 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 TO-3PN/TO-3PB Package Outline APT30DQ60BHB