APT30DQ60BCT THINKISEMI | Alldatasheet

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APT30DQ60BCT/APT30DQ60BCTG 2*30A/600V Heatsink Dual Cathode Common Ultra Fast Recovery Rectifiers Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE APT30DQ60BCT/APT30DQ60BCTG using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. APT30DQ60BCT/APT30DQ60BCTG © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.11T TO-3PN/TO-3PB-SQ Internal Configuration Positive Negative Doubler Common Cathode Backside Backside Backside Common Anode Suffix "CT" Tandem Polarity Backside Series Tandem Polarity Suffix "CA" Suffix "CD" Suffix "HB" Base Base Base Base Suffix "CTG" Suffix "CAG" Suffix "CDG" Suffix "HBG" Bottom Side Metal Heat Sink (Back of Case-Cathode) APT30DQ60BCT/APT30DQ60BCTG MAXIMUM RATINGS All Ratings Per Leg: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol V F I RM C T UNIT Volts μA pF MIN TYP MAX 2.0 2.4 2.4 1.7 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, V R = 200V I F = 30A I F = 60A I F = 30A, T J = 125°C V R = 600V V R = 600V, T J = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 117°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol V R V RRM V RWM I F(AV) I F(RMS) I FSM E AVL T J STG T L UNIT Volts Amps mJ 600 320 -55 to 175 300

© 1995 Thinki Semiconductor Co., Ltd. FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

© 1995 Thinki Semiconductor Co., Ltd.

0.25 I RR M

Figure 10. Diode Reverse Recovery Waveform Defi nition Figure 9. Diode Test Circuit /dt - Rate of Diode Current Change Through Zero Crossing.

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.11T Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.50 2.00 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 Package Outline THINKI TO-3PN/TO-3PB-SQ APT30DQ60BCT/APT30DQ60BCTG