APT30DQ120BCT THINKISEMI | Alldatasheet

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APT30DQ120BCT/APT30DQ120BCTG 2*30A/1200V Heatsink Dual Cathode Common Ultra Fast Recovery Rectifiers Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE APT30DQ120BCT/APT30DQ120BCTG using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. APT30DQ120BCT/APT30DQ120BCTG © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.11T TO-3PN/TO-3PB-SQ Internal Configuration Positive Negative Doubler Common Cathode Backside Backside Backside Common Anode Suffix "CT" Tandem Polarity Backside Series Tandem Polarity Suffix "CA" Suffix "CD" Suffix "HB" Base Base Base Base Suffix "CTG" Suffix "CAG" Suffix "CDG" Suffix "HBG" Bottom Side Metal Heat Sink (Back of Case-Cathode) APT30DQ120BCT/APT30DQ120BCTG MAXIMUM RATINGS All Ratings per leg: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS V R Maximum D.C. Reverse Voltage 1200 VoltsV RRM Maximum Peak Repetitive Reverse Voltage V RWM Maximum Working Peak Reverse Voltage I F(AV) Maximum Average Forward Current (T C = 103°C, Duty Cycle = 0.5) AmpsI F(RMS) RMS Forward Current (Square wave, 50% duty) I FSM Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) 210 E AVL Avalanche Energy (1A, 40mH) mJ T J STG Operating and StorageTemperature Range -55 to 175 T L Lead Temperature for 10 Sec. 300 Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V F Forward Voltage I F = 30A 2.8 3.3 VoltsI F = 60A 3.4 I F = 30A, T J = 125°C 2.1 I RM Maximum Reverse Leakage Current V R = 1200V 100 μA V R = 1200V, T J = 125°C 500 C T Junction Capacitance, V R = 200V 36 pF Symbol Characteristic / Test Conditions UNIT

© 1995 Thinki Semiconductor Co., Ltd. FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/5Rev.11T APT30DQ120BCT/APT30DQ120BCTG Zer o di F /dt - Rate of Diode Current Change Through Zero Crossing. I F - Forward Conduction Current I RRM - Maximum Reverse Recovery Current . trr - Reverse R ecovery Time, measured from zero crossing wher e diode Qrr - Area Under the Curve Defined by I RRM and trr. current goes from positive to negative, to the point at which the straight line through I RRM and 0.25 I RRM passes through zero .

0.25 I RR M

F /dt Adjus t 30μH D.U.T. +18V V r trr/Qrr Waveform Fig. 9. Diode Test Circuit Fig. 10. Diode Reverse Recovery Waveform and Defi nition

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.11T Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.50 2.00 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 Package Outline THINKI TO-3PN/TO-3PB-SQ APT30DQ120BCT/APT30DQ120BCTG