APT30DQ100BCT MICROSEMI | Alldatasheet
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APT30DQ100BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings Per Leg: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol VF IRM CT UNIT Volts µA pF MIN TYP MAX 2.5 3.0 3.06 1.92 100 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, VR = 200V IF = 30A IF = 60A IF = 30A, TJ = 125°C VR = 1000V VR = 1000V, TJ = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 102°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL UNIT Volts Amps mJ APT30DQ100BCT(G) 1000 150 -55 to 175 300 PRODUCT BENEFITS Low Losses Low Noise Switching Cooler Operation Higher Reliability Systems Increased System Power Density PRODUCT FEATURES Ultrafast Recovery Times Soft Recovery Characteristics Popular TO-247 Package Low Forward Voltage Low Leakage Current Avalanche Energy Rated PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters -Inverters Snubber Diode PFC ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 1 - Anode 1 2 - Common Cathode Back of Case -Cathode 3 - Anode 2 1 3 TO-247 1 2 3 (BCT) Microsemi Website - http://www.microsemi.com
APT30DQ100BCT(G)DYNAMIC CHARACTERISTICS 053-4241 Rev B 7-2009 MIN TYP MAX - 24 - 295 - 440 - 4 - - 330 - 1550 - 8 - - 150 - 2250 - 25 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol t rr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 30A, diF/dt = -200A/µs VR = 667V, TC = 25°C IF = 30A, diF/dt = -200A/µs VR = 667V, TC = 125°C IF = 30A, diF/dt = -1000A/µs VR = 667V, TC = 125°C IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight Maximum Mounting Torque Symbol R JC WT Torque MIN TYP MAX .80 0.22 5.9 1.1 UNIT °C/W oz g lbin Nm RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10-5 10-4 10-3 10-2 0.1 1 ZθJC, THERMAL IMPEDANCE (°C/W) 0.5 SINGLE PULSE 0.1 0.3 0.7
0.05 Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2 PDM Note: D = 0.9
diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 9. Diode Test Circuit
0.25 IRRM
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