APT30DL60B MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
- Soft Switching - High Qrr
- Low Noise Switching - Reduced Ringing
- Higher Reliability Systems
- Minimizes or eliminates snubber PRODUCT FEATURES
- Ultrasoft Recovery Times (trr)
- Popular TO-247 Package or Surface Mount D 3PAK Package
- Ultra Low Forward Voltage
- Low Leakage Current PRODUCT APPLICATIONS
- Anti-Parallel Diode -Switchmode Power Supply -Inverters
- Applications - Induction Heating
- Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge APT30DL60B(G) APT30DL60S(G) 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings : T C = 25°C unless otherwise specifi ed. 1 - Cathode 2 - Anode Back of Case -Cathode 1 2 TO-247 D3PAK 1 2 (S) (B) Microsemi Website - http://www.microsemi.com Ultrasoft Recovery Rectifi er Diode Symbol Characteristic / Test Conditions Ratings Unit VR Maximum D.C. Reverse Voltage
600 VoltsVRRM Maximum Peak Repetitive Reverse Voltage
VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current (TC = 126°C, Duty Cycle = 0.5) 30 AmpsIF(RMS) RMS Forward Currrent (Square wave, 50% duty) 51 IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 110 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 175 TL Lead Temperature for 10 Seconds 300 Symbol Characteristic / Test Conditions Min Typ Max Unit VF Forward Voltage IF = 30A 1.25 1.6 VoltsIF = 60A 2.03 IF = 30A, TJ = 125°C 1.9 IRM Maximum Reverse Leakage Current VR = 600V 25 μA VR = 600V, TJ = 125°C 250 CT Junction Capacitance, VR = 200V 31 pF STATIC ELECTRICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
1.1 N·m
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 9. Diode Test Circuit
0.25 IRRM
6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. and foreign patents. US and Foreign patents pending. All Rights Reserved.