APT30DL60BCT MICROSEMI | Alldatasheet
Document overview
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Technical content
- Soft Switching - High Qrr
- Low Noise Switching - Reduced Ringing
- Higher Reliability Systems
- Minimizes or eliminates snubber PRODUCT FEATURES
- Ultrasoft Recovery Times (trr)
- Popular TO-247 Package or Surface Mount D 3PAK Package
- Ultra Low Forward Voltage
- Low Leakage Current PRODUCT APPLICATIONS
- Anti-Parallel Diode -Switchmode Power Supply -Inverters
- Applications - Induction Heating
- Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge APT30DL60BCT(G) 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings per leg: T C = 25°C unless otherwise specifi ed. Microsemi Website - http://www.microsemi.com Ultrasoft Recovery Rectifi er Diode Symbol Characteristic / Test Conditions Ratings Unit VR Maximum D.C. Reverse Voltage
600 VoltsVRRM Maximum Peak Repetitive Reverse Voltage
VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current (TC = 126°C, Duty Cycle = 0.5) 30 AmpsIF(RMS) RMS Forward Currrent (Square wave, 50% duty) 51 IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 320 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 175 TL Lead Temperature for 10 Seconds 300 Symbol Characteristic / Test Conditions Min Typ Max Unit VF Forward Voltage IF = 30A 1.25 1.6 VoltsIF = 60A 2.0 IF = 30A, TJ = 125°C 1.25 IRM Maximum Reverse Leakage Current VR = 600V 25 μA VR = 600V, TJ = 125°C 250 CT Junction Capacitance, VR = 200V 31 pF STATIC ELECTRICAL CHARACTERISTICS 1 - Anode 1 2 - Common Cathode Back of Case -Cathode 3 - Anode 2 1 3
APT30DL60BCT(G)DYNAMIC CHARACTERISTICS 052-6314 Rev B 12 - 2008 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL THERMAL AND MECHANICAL CHARACTERISTICS Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. Symbol Characteristic / Test Conditions Min Typ Max Unit trr Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C 64 ns trr Reverse Recovery Time IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 25°C 317 Qrr Reverse Recovery Charge 962 nC IRRM Maximum Reverse Recovery Current 7 Amps trr Reverse Recovery Time IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 125°C 561 ns Qrr Reverse Recovery Charge 2244 nC IRRM Maximum Reverse Recovery Current 9 Amps trr Reverse Recovery Time IF = 30A, diF/dt = -1000A/μs VR = 400V, TC = 125°C 264 ns Qrr Reverse Recovery Charge 3191 nC IRRM Maximum Reverse Recovery Current 26 Amps Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction-to-Case Thermal Resistance 1.00 °C/W 0.22 oz 5.9 g Torque Maximum Mounting Torque 10 lb·in
1.1 N·m
0.2 0.4 0.6 0.8 1.2 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Peak TJ = PDM x ZθJC TC Duty Factor D = t1/t2 PDM Note: ZθJC, THERMAL IMPEDANCE (°C/W) .562 .316 .0019 .0828 Dissipated Power (Watts) TJ (°C) T C (°C) ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ZEXT
diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 9. Diode Test Circuit
0.25 IRRM
6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. and foreign patents. US and Foreign patents pending. All Rights Reserved.