APT30D60BHB THINKISEMI | Alldatasheet

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Technical content

54Amperes,600Volts Series Connection Ultra Fast Recovery Epitaxial Diodes Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE APT30D60BHB using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. APT30D60BHB © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.10T TO-3PN/TO-3PB Bottom Side Metal Heat Sink Internal Configuration MAXIMUM RATINGS All Ratings Per Leg: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol V F I RM C T UNIT Volts µA pF MIN TYP MAX 1.6 1.8 1.9 1.4 250 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, V R = 200V I F = 30A I F = 60A I F = 30A, T J = 125°C V R = V R Rated V R = V R Rated, T J = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 108°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol V R V RRM V RWM I F(AV) I F(RMS) I FSM T J STG T L UNIT Volts Amps APT30D60BHB 600 320 -55 to 175 300 Positive Negative Doubler Common Cathode Backside Backside Backside Common Anode Suffix "CT" Tandem Polarity Backside Series Tandem Polarity Suffix "CA" Suffix "CD" Suffix "HB" Base Base Base Base

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5Rev.10T APT30D60BHB DYNAMIC CHARACTERISTICS THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight Maximum Mounting Torque Symbol R θJC R θJA W T Torque MIN TYP MAX 1.5 0.22 5.9 1.1 UNIT °C/W oz g lb•in N•m MIN TYP MAX - 85 - 130 - 4 - - 160 - 700 - 8 - - 70 - 1300 - 30 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRM Test Conditions I F = 30A, di F /dt = -200A/µs V R = 400V, T C = 25°C I F = 30A, di F /dt = -200A/µs V R = 400V, T C = 125°C I F = 30A, di F /dt = -1000A/µs V R = 400V, T C = 125°C I F = 1A, di F /dt = -100A/µs, V R = 30V, T J = 25°C Z θ JC , THERMAL IMPEDANCE (°C/W) 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.5 SINGLE PULSE 0.1 0.3 0.7 0.9 0.05 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL Peak T J = P DM x Z θJC + TC Duty Factor D = P DM Note: 0.395 °C/W 0.962 °C/W 0.143 °C/W

0.0024 J/°C

0.0565 J/°C

2.87 J/°C

(watts) Junction temp (°C) RC MODEL Case temperature (°C)

© 1995 Thinki Semiconductor Co., Ltd. /dt - Rate of Diode Current Change Through Zero Crossing.

  • Maximum Reverse Recovery Current.

Figure 9. Diode Test Circuit

0.25 IRRM

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.10T

Package Information

Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.50 2.00 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 TO-3PN/TO-3PB Package Outline APT30D60BHB