APT30D40B THINKISEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

30Amperes,400Volts Single Ultra Fast Recovery Epitaxial Diode Pb Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE APT30D40B using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. APT30D40B © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.10T MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol V F I RM C T UNIT Volts µA pF MIN TYP MAX 1.3 1.5 1.6 1.2 250 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, V R = 200V I F = 30A I F = 60A I F = 30A, T J = 125°C V R = V R Rated V R = V R Rated, T J = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 141°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol V R V RRM V RWM I F(AV) I F(RMS) I FSM T J STG T L UNIT Volts Amps APT30D40B 400 320 -55 to 175 300

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5Rev.10T APT30D40B DYNAMIC CHARACTERISTICS THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight Maximum Mounting Torque Symbol R θJC R θJA W T Torque MIN TYP MAX .67 0.22 5.9 1.1 UNIT °C/W oz g lb•in N•m MIN TYP MAX - 32 - 49 - 3 - - 95 - 360 - 7 - - 47 - 730 - 25 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRM Test Conditions I F = 30A, di F /dt = -200A/µs V R = 266V, T C = 25°C I F = 30A, di F /dt = -200A/µs V R = 266V, T C = 125°C I F = 30A, di F /dt = -1000A/µs V R = 266V, T C = 125°C I F = 1A, di F /dt = -100A/µs, V R = 30V, T J = 25°C Z θ JC , THERMAL IMPEDANCE (°C/W) 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.5 SINGLE PULSE 0.1 0.3 0.7 0.9 0.05 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL Peak T J = P DM x Z θJC + TC Duty Factor D = P DM Note: 0.289 °C/W 0.381 °C/W

0.00448 J/°C

0.120 J/°C

(watts) RC MODEL Junction temp (°C) Case temperature (°C)

© 1995 Thinki Semiconductor Co., Ltd. /dt - Rate of Diode Current Change Through Zero Crossing.

  • Maximum Reverse Recovery Current.

Figure 9. Diode Test Circuit

0.25 IRRM

Ejector pin hole thickness (h) D A be c L H Ø SYMBOL DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES MIN. MAX. MIN. MAX. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 Ref. 0.138 Ref. E2 3.600 Ref. 0.142 Ref. L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Ø 7.100 7.300 0.280 0.287 e 10.900 Typ. 0.429 Typ. H 5.980 Typ. 0.235 Typ. h 0.000 0.300 0.000 0.012 TO-247-2L DIMENSIONS © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.10T APT30D40B