APT30D100BHB THINKISEMI | Alldatasheet

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Technical content

APT30D100BHB/APT30D100BHBG 2*18A/1000V Heatsink Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE APT30D100BHB/APT30D100BHBG using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. APT30D100BHB/APT30D100BHBG © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.11T TO-3PN/TO-3PB-SQ Bottom Side Metal Heat Sink Internal Configuration Positive Negative Doubler Common Cathode Backside Backside Backside Common Anode Suffix "CT" Tandem Polarity Backside Series Tandem Polarity Suffix "CA" Suffix "CD" Suffix "HB" Base Base Base Base Suffix "CTG" Suffix "CAG" Suffix "CDG" Suffix "HBG" MAXIMUM RATINGS All Ratings Per Leg: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol V F I RM C T UNIT Volts μA pF MIN TYP MAX 1.9 2.3 2.2 1.7 250 500 Characteristic / Test Conditions Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, V R = 200V I F = 30A I F = 60A I F = 30A, T J = 125°C V R = V R Rated V R = V R Rated, T J = 125°C Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T C = 54°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Symbol V R V RRM V RWM I F(AV) I F(AV) I FSM T J STG T L UNIT Volts Amps 1000 210 -55 to 175 300 APT30D100BHB/APT30D100BHBG

© 1995 Thinki Semiconductor Co., Ltd. FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

© 1995 Thinki Semiconductor Co., Ltd.

0.25 I RRM

Figure 10. Diode Reverse Recovery Waveform Defi nition Figure 9. Diode Test Circuit /dt - Rate of Diode Current Change Through Zero Crossing.

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.11T Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.50 2.00 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 Package Outline THINKI TO-3PN/TO-3PB-SQ APT30D100BHB/APT30D100BHBG