APT20M18B2VR_04 ADPOW | Alldatasheet
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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. G D S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout.
- TO-264 MAX Package • Avalanche Energy Rated
- Faster Switching
- Lower Leakage POWER MOS V® MOSFET APT20M18B2VR A20M18LVR 200V 100A 0.018ΩΩΩΩΩ CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current 6 @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) UNIT Volts Ohms µA nA Volts MIN TYP MAX 200 0.018 250 ±100 APT20M18B2VR_LVR 200 100 400 ±30 ±40 625 5.00 -55 to 150 300 100 3000 T-MAX™ TO-264 B2VR LVR
DYNAMIC CHARACTERISTICS APT20M18B2VR_LVR 050-5910 Rev A 5-2004 Symbol RθJC RθJA MIN TYP MAX 0.20 UNIT °C/W Characteristic Junction to Case Junction to Ambient SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -49A) Reverse Recovery Time (IS = -49A, dlS/dt = 100A/µs) Reverse Recovery Charge (IS = -49A, dlS/dt = 100A/µs) Peak Diode Recovery dv/dt 5 UNIT Amps Volts ns µC V/ns MIN TYP MAX 100 400 1.3 360 6.7 Symbol IS ISM VSD t rr Q rr dv/dt Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 150V ID = 100A @ 25°C VGS = 15V VDD = 150V ID = 100A @ 25°C RG = 0.6Ω MIN TYP MAX 9880 2320 700 330 145 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM SINGLE PULSE ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.25 0.20 0.15 0.10 0.05 0.5 0.1 0.3 0.7 0.9 0.05
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T j = +25°C, L = 600µH, RG = 25Ω, Peak IL = 100A
5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID100A di/dt ≤ 200A/µs VR ≤200V TJ ≤ 150°C 6 The maximum current is limited by lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein.