APT20M18B2VFR ADPOW | Alldatasheet

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ADVANCED TECHNICALINFORMATION MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. UNIT Volts Amps Volts Watts W/°C Amps mJ UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 200 100 0.018 250 1000 ±100 APT20M18 200 100 400 ±30 ±40 625 5.0 -55 to 150 300 100 3000 APT20M18B2VFR APT20M18LVFR 200V 100A 0.018 /G87 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 5 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 2.5mA) Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com /G80/G79/G87/G69/G82/G32/G77/G79/G83/G32/G86/G174FREDFET T-MAX ™ USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 G D S TO-264 050-5906 rev- 11-99 B2VFR LVFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

  • Identical Specifications: T-MAX™ or TO-264 Package  Lower Leakage  Faster Switching  Fast Recovery Body Diode  100% Avalanche Tested

ADVANCED TECHNICALINFORMATION DYNAMIC CHARACTERISTICS APT20M18 B2VFR - LVFR SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 6 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Q rr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 0.6/G87 MIN TYP MAX 9910 2270 650 330 143 UNIT pF nC ns MIN TYP MAX 100 400 1.3 Tj = 25°C 230 Tj = 125°C 450 Tj = 25°C 0.9 Tj = 125°C 3.4 Tj = 25°C 11 Tj = 125°C 20 THERMAL CHARACTERISTICS Symbol R /G113JC R /G113JA MIN TYP MAX 0.20 UNIT °C/W Characteristic Junction to Case Junction to Ambient Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Collector Emitter Gate Collector Emitter Gate Collector Collector 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. 15.49 (.610) 6.20 (.244) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2.87 (.113) 3.12 (.123) 2-Plcs. TO-264 (L) Package OutlineT-MAX ™ (B2) Package Outline These dimensions are equal to the TO-247 without the mounting hole. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 1 Repetitive Rating: Pulse width limited by maximum Tj 4 Starting Tj = +25°C, L = 600µH, RG = 25/G87, Peak IL = 100A 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 The maximum current is limited by lead temperature. 3 See MIL-STD-750 Method 3471 6 IS /G163 ID [Cont.], di/dt = 100A/µs, VR = 50V, Tj /G163 150°C, RG = 2.0/G87 APT Reserves the right to change, without notice, the specifications and information contained herein. 050-5906 rev- 11-99