APT20M16B2LL_04 ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com T-MAX™ G D S TO-264 B2LL LLL Power MOS 7 ® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. APT20M16B2LL APT20M16LLL 200V 100A 0.016ΩΩΩΩΩ

  • Lower Input Capacitance • Increased Power Dissipation
  • Lower Miller Capacitance • Easier To Drive
  • Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package POWER MOS 7 R MOSFET Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current 7 @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) UNIT Volts Ohms µA nA Volts MIN TYP MAX 200 0.016 100 500 ±100 APT20M16B2LL_LLL 200 100 400 ±30 ±40 694 5.56 -55 to 150 300 100 3000

DYNAMIC CHARACTERISTICS APT20M16 B2LL_LLL 050-7014 Rev C 6-2004 Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID100A) Reverse Recovery Time (IS = -ID100A, dlS/dt = 100A/µs) Reverse Recovery Charge (IS = -ID100A, dlS/dt = 100A/µs) Peak Diode Recovery dv/dt 5 UNIT Amps Volts ns µC V/ns MIN TYP MAX 100 400 1.3 360 6.7 Symbol RθJC RθJA MIN TYP MAX 0.18 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol IS ISM VSD t rr Q rr dv/dt Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 100A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 100A @ 25°C RG = 0.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 133V, VGS = 15V ID = 100A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 133V, VGS = 15V ID = 100A, RG = 5Ω MIN TYP MAX 7220 2330 145 140 120 850 930 935 985 UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T j = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.

7 The maximum current is limited by lead temperature

APT Reserves the right to change, without notice, the specifications and information contained herein. Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM SINGLE PULSE ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.20 0.16 0.12 0.08 0.04 0.5 0.1 0.3 0.7 0.9 0.05