APT20M13PVR ADPOW | Alldatasheet

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G D S PRELIMINAR Y Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 5mA) 050-5834 Rev - MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 200 146 0.013 100 500 ±100 APT20M13PVR 200 146 584 ±30 ±40 625 5.0 -55 to 150 300 146 3600 APT20M13PVR 200V 146A 0.013Ω Power MOS V ® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

  • Faster Switching • 100% Avalanche Tested
  • Lower Leakage • New High Power P-Pack Package CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com POWER MOS V ® P-Pack

Y Symbol IS ISM VSD t rr Q rr DYNAMIC CHARACTERISTICS Symbol C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 0.6Ω MIN TYP MAX 18000 4100 1350 630 290 UNIT pF nC ns APT20M13PVR Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 050-5834 Rev - Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dlS /dt = 100A/µs) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC MIN TYP MAX 146 584 1.5 460

1 Repetitive Rating: Pulse width limited by maximum junction3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = .34mH, RG = 25Ω , Peak IL =146A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL CHARACTERISTICS Symbol R θJC R θJA MIN TYP MAX 0.20 UNIT °C/W Characteristic Junction to Case Junction to Ambient P-Pack Package Outline 29.34 (1.155) 29.08 (1.145) 35.81 (1.41) 35.31 (1.39) 51.05 (2.01) 50.55 (1.99) 3.43 (.135) 2.92 (.115) (4-Places) 11.63 (.458) 11.13 (.438) 12.45 (.490) 11.94 (.470) 35.18 (1.385) 34.67 (1.365) 41.53 (1.635) 41.02 (1.615) 3.43 (.135) 2.92 (.115) (4-Places) 5.33 (.210) 4.83 (.190) 1.40 (.055) 1.02 (.040) 9.27 (.365) 8.64 (.340) .635 (.025) .381 (.015) 4.39 (.173) 4.14 (.163) (4 Places) Dimensions in Millimeters and (Inches) 28.70 (1.130) 28.45 (1.120) 4.06 (.160) 3.81 (.150) (5 Places) 10.92 (.430) 10.67 (.420) Drain Gate Source Source Sense