APT20M120JCU2 MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
  • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
  • ISOTOP® Package (SOT-227)
  • Very low stray inductance
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS Compliant ISOTOP® Boost chopper MOSFET + SiC chopper diode Power module K DG S VDSS = 1200V RDSon = 560mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C

APT20M120JCU2 – Rev 0 September, 2009 www.microsemi.com 2-5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VDS =1200V VGS = 0V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 14A 560 672 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2.5mA 3 4 5 V IGSS Gate – Source Leakage Current V GS = ±30 V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 7736 Coss Output Capacitance 715 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 92 pF Qg Total gate Charge 300 Qgs Gate – Source Charge 50 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 14A 140 nC Td(on) Turn-on Delay Time 50 Tr Rise Time 31 Td(off) Turn-off Delay Time 170 Tf Fall Time Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 14A RG = 2.2Ω 48 ns SiC chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 32 200 IRM Maximum Reverse Leakage Current V R=1200V Tj = 175°C 56 1000 µA IF DC Forward Current Tc = 100°C 10 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 10A Tj = 175°C 2.3 3 V QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =500A/µs 80 nC f = 1MHz, VR = 200V 96 C Total Capacitance f = 1MHz, VR = 400V 69 pF Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Mosfet 0.23 RthJC Junction to Case Thermal Resistance SiC Diode 1.65 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -40 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g

APT20M120JCU2 – Rev 0 September, 2009 www.microsemi.com 3-5 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. Typical Mosfet Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 rectangular Pulse D uration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Source Gate Drain Cathode

APT20M120JCU2 – Rev 0 September, 2009 www.microsemi.com 4-5 Low Voltage Output Characteristics TJ=25°C TJ=125°C 0 5 10 15 20 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=10V Low Voltage Output Characteristics 4.5V 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=6, 7, 8 & 9V TJ=125°C Normalized RDS(on) vs. Temperature 0.5 1.5 2.5 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDSon, Drain to Source ON resistance VGS=10V ID=14A Transfert Characteristics TJ=25°C TJ=125°C 0123456 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle Gate Charge vs Gate to Source VDS=240V VDS=600V VDS=960V 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VGS, Gate to Source Voltage ID=14A TJ=25°C Ciss Crss Coss 100 1000 10000 0 50 100 150 200 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage

APT20M120JCU2 – Rev 0 September, 2009 www.microsemi.com 5-5 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 00 . 511 . 522 . 533 . 5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 100 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 100 200 300 400 500 600 700 1 10 100 1000 VR Reverse Voltage C, Capacitance (pF) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.