APT20M11JVR ISC | Alldatasheet
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Technical content
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FEATURES
- DrainCurrent-ID=175A@TC=25℃
- DrainSource Voltage-VDSS=200V(Min)
- Static Drain-Source On-Resistance -RDS(on) =11mΩ(Max)@VGS=10V
APPLICATIONS
- Converters
- FasterSwitching AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 200 V VGS Gate-SourceVoltage-Continuous ±30 V ID DrainCurrent-Continuous 175 A IDM DrainCurrent-SinglePulse 700 A PD TotalDissipation@TC=25℃ 700 W TJ Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.18 ℃/W D GS S SOT-227package
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0,ID=0.25mA 200 - - V IDSS ZeroGateVoltageDrainCurrent VDS=200V,VGS=0 - - 100 uA IGSS Gate-BodyLeakageCurrent VGS= ±30V,VDS=0 - - ±100 nA VGS(th) GateThresholdVoltage VDS=VGS, ID=5mA 2.0 - 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V,ID=87.5A - - 11 mΩ VSD DiodeForwardVoltage ISD=175A,VGS=0V - - 1.3 V PACKAGEOUTLINE(UNIT:MM)
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