APT20GT60BRDQ1 ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
APT20GT60BRDQ1(G)TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA) Gate Threshold Voltage (VCE = VGE, IC = 500µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES Units Volts µA nA Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL APT20GT60BRDQ1(G) 600 ±30 80A @ 600V 174 -55 to 150 300 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 600 3 4 5 1.6 2.0 2.5 2.8 1000 ± 100 600V APT20GT60BRDQ1 APT20GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C E G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
- Low Forward Voltage Drop • High Freq. Switching to 150KHz
- Low Tail Current • Ultra Low Leakage Current
- RBSOA and SCSOA Rated Thunderbolt IGBT® TO-247 G C E
APT20GT60BRDQ1(G) 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W gm MIN TYP MAX .72 1.35 5.9 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Symbol RθJC RθJC WT DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V IC = 20A TJ = 150°C, RG = 5Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 20A RG = 5Ω TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 20A RG = 5Ω TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 6 MIN TYP MAX 1100 110 7.5 100 215 210 245 100 215 375 395 UNIT pF V nC A ns µJ ns µJ
diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 32. Diode Test Circuit