APT20GN60BDQ1 ADPOW | Alldatasheet
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APT20GN60BDQ1(G)TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 2mA) Gate Threshold Voltage (VCE = VGE, IC = 290µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Units Volts µA nA Ω Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL APT20GN60BDQ1(G) 600 ±30 60A @ 600V 136 -55 to 175 300 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
- 600V Field Stop
- Trench Gate: Low V CE(on)
- Easy Paralleling
- 6µs Short Circuit Capability
- 175°C Rated Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MIN TYP MAX 600 5.0 5.8 6.5 1.1 1.5 1.9 1.7 TBD 300 N/A 600V APT20GN60BDQ1 APT20GN60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-247 G C E C E G
APT20GN60BDQ1(G) 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 R G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W gm MIN TYP MAX 1.1 1.35 5.9 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Symbol RθJC RθJC WT DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V IC = 20A TJ = 175°C, RG = 4.3Ω 7, VGE = 15V, L = 100µH,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150°C, RG = 4.3Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 20A RG = 4.3Ω 7 TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 20A RG = 4.3Ω 7 TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 MIN TYP MAX 1110 9.5 120 140 230 260 580 160 130 250 450 750 UNIT pF V nC A µs ns µJ ns µJ
diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 32. Diode Test Circuit