APT20GF120BRDQ1 ADPOW | Alldatasheet
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APT20GF120B_SRDQ1(G)TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 600µA) Gate Threshold Voltage (VCE = VGE, IC = 600µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES Units Volts mA nA Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL APT20GF120B_SRDQ1(G) 1200 ±30 64A @ 1200V 200 -55 to 150 300 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 1200 4.5 5.5 6.5 2.7 3.2 3.3 ±100 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed.
- Low Forward Voltage Drop • High Freq. Switching to 20KHz
- RBSOA and SCSOA Rated • Ultra Low Leakage Current
- Ultrafast Soft Recovery Anti-parallel Diode FAST IGBT & FRED TO-247 G C E D3PAK G C E (S) (B) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1 APT20GF120BRDQ1G* APT20GF120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C E G
APT20GF120B_SRDQ1(G) 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is
loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W gm MIN TYP MAX .63 1.18 5.9 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Symbol RθJC RθJC WT DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V IC = 15A TJ = 150°C, RG = 4.3Ω, VGE = 15V, L = 100µH,VCE = 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V IC = 15A RG = 4.3Ω TJ = +25°C Inductive Switching (125°C) VCC = 800V VGE = 15V IC = 15A RG = 4.3Ω TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 6 MIN TYP MAX 1090 125 10.5 100 120 895 850 840 145 110 865 1480 1058 UNIT pF V nC A ns µJ ns µJ
diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 32. Diode Test Circuit