APT20GF120BR

APT20GF120BR ADPOW | Alldatasheet

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G C E MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT20GF120BR 1200V 32A The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.

• Low Forward Voltage Drop  High Freq. Switching to 20KHz  Low Tail Current  Ultra Low Leakage Current  Avalanche Rated  RBSOA and SCSOA Rated /G70/G97/G115/G116/G32 /G73/G71/G66/G84 TO-247 G C E CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 MIN TYP MAX 1200 4.5 5.5 6.5 2.7 3.2 3.3 3.9 0.8 5.0 ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA) Gate Threshold Voltage (VCE = VGE , IC = 350µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C) Collector Cut-off Current (VCE = VCES , VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES , VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) Symbol BV CES VGE (TH) VCE (ON) ICES IGES STATIC ELECTRICAL CHARACTERISTICS UNIT Volts mA nA Symbol VCES VCGR VGE IC1 IC2 ICM ILM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20K/G87) Gate-Emitter Voltage Continuous Collector Current @ T C = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current 1 @ TC = 25°C RBSOA Clamped Inductive Load Current @ Rg = 11/G87/G32TC = 125°C Single Pulse Avalanche Energy 2 Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT20GF120BR 1200 1200 ±20 200 -55 to 150 300 UNIT Volts Amps mJ Watts

td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe DYNAMIC CHARACTERISTICS Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance Test Conditions Capacitance V GE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES IC = IC2 Resistive Switching (25°C) VGE = 15V VCC = 0.5VCES IC = IC2 R G = 10/G87 Inductive Switching (150°C) VCLAMP (Peak) = 0.66VCES VGE = 15V IC = IC2 R G = 10/G87 TJ = +150°C Inductive Switching (25°C) VCLAMP (Peak) = 0.66VCES VGE = 15V IC = IC2 R G = 10/G87 TJ = +25°C VCE = 20V, IC = IC2 MIN TYP MAX 1050 1210 100 150 63 110 95 140 13 20 62 90 15 30 67 130 92 140 93 190 17 34 30 60 105 160 71 140 1.3 3.0 1.5 3.0 2.7 5.0 17 30 35 70 93 140 70 140 2.4 5.0 UNIT pF nC ns ns mJ ns mJ S UNIT °C/W oz gm lbin Nm MIN TYP MAX 0.63 0.22 6.1 1.1 Characteristic Junction to Case Junction to Ambient Package Weight Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) Symbol R /G81JC R /G81JA W T Torque THERMAL AND MECHANICAL CHARACTERISTICS 1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 IC = IC2 , R GE = 25/G87, L = 110µH, Tj = 25°C

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

5.0 4.0 2.0 1.5 1.0 1.2 1.1 0.9 0.8 0.7 0.1 100 VCC = 0.66 VCES VGE = +15V TJ = +25°C IC = IC2 VCC = 0.66 VCES VGE = +15V TJ = +125°C R G = 10 /G87 VCC = 0.66 VCES VGE = +15V R G = 10 /G87 IC1

0.5 IC2

TJ, JUNCTION TEMPERATURE ( °C) T C , CASE TEMPERATURE ( °C) Figure 8, Typical VCE (SAT) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature TJ, JUNCTION TEMPERATURE ( °C) R G , GATE RESISTANCE (OHMS) Figure 10, Breakdown Voltage vs Junction Temperature Figure 11, Typical Switching Energy Losses vs Gate Resistance TJ, JUNCTION TEMPERATURE ( °C) I C , COLLECTOR CURRENT (AMPERES) Figure 12, Typical Switching Energy Losses vs. Junction Temperature Figure 13, Typical Switching Energy Losses vs Collector Current F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 0.1 1.0 10 100 1000 5.0 4.0 3.0 2.0 1.0 1.6 1.2 0.8 0.4 For Both: Duty Cycle = 50% TJ = +125°C Tsink = +90°C Gate drive as specified Power dissapation = 56W ILOAD = IRMS of fundamental IC , COLLECTOR CURRENT (AMPERES) TOTAL SWITCHING ENERGY LOSSES (mJ) BV CES , COLLECTOR-TO-EMITTER BREAKDOWN V CE (SAT), COLLECTOR-TO-EMITTER VOLTAGE (NORMALIZED) SATURATION VOLTAGE (VOLTS) SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES (mJ) I C , COLLECTOR CURRENT (AMPERES)