APT20DC120HJ MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
  • ISOTOP® Package (SOT-227)
  • Very low stray inductance
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Low losses
  • Low noise switching
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS Compliant ISOTOP® SiC Diode Full Bridge Power Module

APT20DC120HJ – Rev 0 November, 2009 www.microsemi.com 2-3 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 20A Tj = 175°C 2.3 3.0 V Tj = 25°C 64 400 IRM Maximum Reverse Leakage Current V R = 1200V Tj = 175°C 112 2000 µA QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1000A/µs 80 nC f = 1MHz, VR = 200V 192 C Total Capacitance f = 1MHz, VR = 400V 138 pF Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal resistance 0.8 RthJA Junction to Ambient 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 175 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) 3.30 (.130) 4.57 (.180)

APT20DC120HJ – Rev 0 November, 2009 www.microsemi.com 3-3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.2 0.4 0.6 0.8 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 00 . 511 . 522 . 533 . 5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 100 150 200 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 200 400 600 800 1000 1200 1400 1 10 100 1000 V R Reverse Voltage C, Capacitance (pF) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.