APT200GN60JDQ4 ADPOW | Alldatasheet
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APT200GN60JDQ4TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses
- 600V Field Stop
- Trench Gate: Low V CE(on)
- Easy Paralleling
- 5µs Short Circuit Capability
- Intergrated Gate Resistor: Low EMI, High Reliability
- 175°C Rated Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor 600V APT200GN60JDQ4 C E G SOT-227 ISOTOP® file # E145592 "UL Recognized" G E E C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES RGINT UNIT Volts µA nA Ω Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG APT200GN60JDQ4 600 ±20 283 158 600 600A @600V 682 -55 to 175 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range MIN TYP MAX 600 5 5.8 6.5 1.05 1.45 1.85 1.65 1.15 1.19 TBD 600
THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W Volts oz gm Ib•in N•m MIN TYP MAX .22 .33 2500 1.03 29.2 1.1 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque Symbol RθJC RθJC VIsolation WT Torque Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V IC = 100A TJ = 175°C, RG = 1.0Ω 7, VGE = 15V, L = 100µH, VCE = 600V VCC = 360V, VGE = 15V, TJ = 150°C, RG = 1.0Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 200A RG = 1.0Ω 7 TJ = +25°C Inductive Switching (125°C) VCC =400V VGE = 15V IC = 200A RG = 1.0Ω 7 TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 MIN TYP MAX 14100 4610 4000 8.2 1180 660 600 560 100 620 UNIT pF V nC A µs ns mJ ns mJ 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 R G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein.
APT200GN60JDQ4TYPICAL PERFORMANCE CURVES ZθJC, THERMAL IMPEDANCE (°C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.5 SINGLE PULSE 0.1 0.3 0.7
0.05 Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2 PDM Note: D = 0.9 Characteristic / Test Conditions Maximum Average Forward Current (TC = 108°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions IF = 200A Forward Voltage IF = 400A IF = 200A, TJ = 125°C STATIC ELECTRICAL CHARACTERISTICS UNIT Amps UNIT Volts MIN TYP MAX 2.0 2.6 1.67 APT200GN60LDQ4 100 156 1000 DYNAMIC CHARACTERISTICS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MIN TYP MAX - 34 - 160 - 290 - 5 - - 220 - 1530 - 13 - - 100 - 2890 - 44 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 100A, diF/dt = -200A/µs VR = 400V, TC = 25°C IF = 100A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 100A, diF/dt = -1000A/µs VR = 400V, TC = 125°C IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION SINGLE PULSE0.05 FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL 0.0673 0.188 0.0743 0.0182 0.361 5.17 Power (watts) Junction temp (°C) RC MODEL Case temperature (°C)
for either Emitter/Anode terminal. ISOTOP® is a Registered Trademark of SGS Thomson. diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 32. Diode Test Circuit