APT200GN60J ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

APT200GN60JTYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES RGINT UNIT Volts mA nA Ω Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG APT200GN60J 600 ±20 250 110 600 600A @600V 568 -55 to 150 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range APT200GN60J 600V APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

  • 600V Field Stop
  • Trench Gate: Low V CE(on)
  • Easy Paralleling
  • 10µs Short Circuit Capability
  • Intergrated Gate Resistor: Low EMI, High Reliability Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor SOT-227 G E E C ISOTOP® "UL Recognized" G C E MIN TYP MAX 600 5 5.8 6.5 1.05 1.45 1.85 1.65 1.15 1.19 TBD 600

THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W Volts oz gm Ib•in N•m MIN TYP MAX .22 N/A 2500 1.03 29.2 1.1 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque Symbol RθJC RθJC VIsolation WT Torque DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V IC = 100A TJ = 150°C, RG = 5Ω 7, VGE = 15V, L = 100µH,VCE = 600V VCC = 480V, VGE = 15V, TJ = 125°C, RG = 5Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 100A RG = 5Ω 7 TJ = +25°C Inductive Switching (125°C) VCC =400V VGE = 15V IC = 100A RG = 5Ω 7 TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 MIN TYP MAX 14100 4610 4000 8.2 1180 660 600 1050 TBD 1720 2810 1150 TBD 1955 2865 UNIT pF V nC A µs ns µJ ns µJ 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, ICES includes both IGBT and FRED leackage. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive tun-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22) 6 Eoff is the clamped induvtive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein.