APT200GN60B2G MICROSEMI | Alldatasheet
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Symbol Parameter Ratings Unit VCES Collector-Emitter Voltage 600 Volts VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 283 AmpsIC2 Continuous Collector Current @ TC = 110°C 158 ICM Pulsed Collector Current 1 600 SSOA Switching Safe Operating Area @ TJ = 175°C 600A @ 600V PD Total Power Dissipation 682 Watts TJ, TSTG Operating and Storage Junction Temperature Range -55 to 175 TL Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. 300 Maximum Ratings All Ratings: T C = 25°C unless otherwise specifi ed. Symbol Characteristic / Test Conditions Min Typ Max Unit V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) 600 - - Volts VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C) 5.0 5.8 6.5 VCE(ON) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) 1.05 1.45 1.85 Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) - 1.65 - ICES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 -- 2 5 μA Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 - - 1000 IGES Gate-Emitter Leakage Current (VGE = ±20V) - - 600 nA RG(int) Integrated Gate Resistor - 2 - Ω Static Electrical Characteristics CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-7628 Rev A 9-2008 APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifi es gate drive design and minimizes losses.
- 1200V Field Stop
- Trench Gate: Low VCE(ON)
- Easy Paralleling
- Integrated Gate Resistor :Low EMI, High Reliability
- RoHS Compliant Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
Dynamic Characteristics APT200GN60B2G Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance VGE = 0V, VCE = 25V f = 1MHz - 14100 - pFCoes Output Capacitance - 461 - Cres Reverse Transfer Capacitance - 393 - VGEP Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V VCE= 300V IC = 100A - 8.2 - V Qg Total Gate Charge - 1180 - nCQge Gate-Emitter Charge -8 5 - Qgc Gate-Collector Charge - 660 - SSOA Switching Safe Operating Area TJ = 150°C, RG = 1.0Ω 7, VGE = 15V, L = 100μH, VCE= 600V 600 A td(on) Turn-On Delay Time Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 200A RG = 1.0Ω TJ = +25°C -5 0 - ns tr Current Rise Time -8 0 - td(off) Turn-Off Delay Time - 560 - tf Current Fall Time - 100 - Eon1 Turn-On Switching Energy 4 -1 3 - mJEon2 Turn-On Switching Energy 5 -1 5 - Eoff Turn-Off Switching Energy 6 -1 1 - td(on) Turn-On Delay Time Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 200A RG = 1.0Ω TJ = +125°C -5 0 - ns tr Current Rise Time -8 0 - td(off) Turn-Off Delay Time - 620 - tf Current Fall Time -7 0 - Eon1 Turn-On Switching Energy 4 -1 4 - mJEon2 Turn-On Switching Energy 5 -1 6 - Eoff Turn-Off Switching Energy 6 -1 0 - Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case (IGBT) - - 0.13 °C/W RθJC Junction to Case (DIODE) - - N/A 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 R G is external gate resistance not including gate driver impedance. Thermal and Mechanical Characteristics Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.