APT1004RGN ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT1004RGN 1000V 3.3A 4.00 Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com 050-0019 Rev B POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS G D S Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. APT1004RGN 1000 3.3 13.2 ±30 100 0.8 -55 to 150 300 UNIT Volts Amps Volts Watts W/°C STATIC ELECTRICAL CHARACTERISTICS UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 1000 3.3 4.00 250 1000 ±100 2 4 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID (ON) x RDS (ON) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 1.0mA) Symbol BV DSS ID (ON) R DS (ON) IDSS IGSS VGS (TH) SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. MIN TYP MAX 100 100 3.3 UNIT Watts Amps TO-257

DYNAMIC CHARACTERISTICS APT1004RGN SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Test Conditions f = 1 MHz VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.8Ω Characteristic Drain-to-Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol C DC C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf MIN TYP MAX 81 2 805 950 115 160 37 60 35 55 4.3 7 18 27 10 20 12 24 16 32 UNIT pF nC ns 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], dlS /dt = 100A/µs) Symbol IS ISM VSD t rr Q rr Symbol R θJC R θJA Characteristic Junction to Case Junction to Ambient UNIT Amps Volts ns µC MIN TYP MAX 3.3 13.2 1.3 290 580 1.65 3.3 UNIT W/°C MIN TYP MAX 1.20 THERMAL CHARACTERISTICS 050-0019 Rev B ZθJC, THERMAL IMPEDANCE ( °C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.5 1.0 0.5 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01