APT1004RCN

APT1004RCN ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT1004RCN 1000V 3.6A 4.00 Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com 050-0017 Rev C POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS G D S TO-254 Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. APT1004RCN 1000 3.6 14.4 ±30 125 1.0 -55 to 150 300 UNIT Volts Amps Volts Watts W/°C STATIC ELECTRICAL CHARACTERISTICS UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 1000 3.6 4.00 250 1000 ±100 2 4 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID (ON) x RDS (ON) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 1.0mA) Symbol BV DSS ID (ON) R DS (ON) IDSS IGSS VGS (TH) SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. MIN TYP MAX 125 125 3.6 UNIT Watts Amps

DYNAMIC CHARACTERISTICS APT1004RCN SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Test Conditions f = 1 MHz VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.8Ω Characteristic Drain-to-Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol C DC C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf MIN TYP MAX 15 22 805 950 115 160 37 60 35 55 4.3 7 18 27 10 20 12 24 16 32 UNIT pF nC ns 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], dlS /dt = 100A/µs) Symbol IS ISM VSD t rr Q rr Symbol R θJC R θJA Characteristic Junction to Case Junction to Ambient UNIT Amps Volts ns µC MIN TYP MAX 3.6 14.4 1.3 290 580 1.65 3.3 UNIT W/°C MIN TYP MAX 1.00 THERMAL CHARACTERISTICS 050-0017 Rev C ZθJC, THERMAL IMPEDANCE ( °C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 0.5 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01

VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE Q g, TOTAL GATE CHARGE (nC) V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGEVGS , GATE-TO-SOURCE VOLTAGE (VOLTS) I D , DRAIN CURRENT (AMPERES) IDR , REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF) APT1004RCN 10µS 100µS 1mS 10mS 100mS DC 10,000 1,000 100 100 1 5 10 50 100 500 1000 0 10 20 30 40 50 0 20 40 60 80 100 0 0.5 1.0 1.5 2.0 3.81 (.150) BSC 1.14 (.045) .89 (.035) Dia. Typ.

3 Leads

13.84 (.545) 13.59 (.535) 31.37 (1.235) 30.35 (1.195) 13.84 (.545) 3.53 (.139) 1.27 (.050) 1.02 (.040) 6.60 (.260) 6.32 (.249) 3.81 (.150) BSC 6.91 (.272) 6.81 (.268) Drain Source Gate Dia. 20.32 (.800) 16.89 (.665) Dimensions in Millimeters and (Inches) 050-0017 Rev C 0.5 0.1 ID = ID [Cont.] TJ =+150°CT J =+25°C VDS =500V VDS =200V VDS =100V C rss C iss C oss TC =+25°C TJ =+150°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON)