APT1004RKN ADPOW | Alldatasheet

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Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec. R θJC R θJA TL STATIC ELECTRICAL CHARACTERISTICS V DSS ID IDM V GS P D TJ,TSTG Drain-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate-Source Voltage Total Power Dissipation @ T C = 25°C, Derate Above 25°C Operating and Storage Junction Temperature Range G D 1.00 °C/W 80 °C/W 300 °C Symbol Characteristic MIN TYP UNIT MAX Symbol Parameter All Ratings: TC = 25°C unless otherwise specified.MAXIMUM RATINGS S APT1004R2KN APT1004RKN UNIT 1000 1000 Volts 3.5 3.6 Amps 14.0 14.4 Amps ±30 Volts

125 Watts

-55 to 150 °C THERMAL CHARACTERISTICS µA TYPMIN MAX UNITSymbol Characteristic / Test Conditions / Part Number BV DSS IDSS IGSS ID(ON) VGS (TH) R DS (ON) APT1004RKN 1000V 3.6A 4.00 Ω APT1004R2KN 1000V 3.5A 4.20 Ω TO-220 N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV ® CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-0036 Rev C Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) On State Drain Current 2 (VDS > ID (ON) x RDS (ON) Max, VGS = 10V) Gate Threshold Voltage (VDS = VGS , ID = 1.0mA) Static Drain-Source On-State Resistance 2 (VGS = 10V, ID = 0.5 ID [Cont.]) USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT1004RKN 1000 Volts APT1004R2KN 1000 Volts 250 1000 ±100 nA APT1004RKN 3.6 Amps APT1004R2KN 3.5 Amps

24 Volts

APT1004RKN 4.00 Ohms APT1004R2KN 4.20 Ohms

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf 805 950 pF 115 160 pF 37 60 pF 35 55 nC 4.3 6.5 nC 18 27 nC 10 20 ns 91 8 ns 32 48 ns 23 46 ns DYNAMIC CHARACTERISTICS VGS = 0V VDS = 25V f = 1 MHz V GS = 10V, ID = ID [Cont.] V DD = 0.5 VDSS VDD = 0.5 VDSS ID = ID [Cont.], VGS = 15V R G = 1.8Ω Test Conditions TYP UNITMAXMINSymbol Characteristic APT1004R/1004R2KN

14.4 Amps

14.0 Amps

V DS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. Safe Operating Area Safe Operating Area Inductive Current Clamped SOA1 SOA2 ILM SAFE OPERATING AREA CHARACTERISTICS Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs) Reverse Recovery Charge IS ISM VSD t rr Q rr APT1004RKN 3.6 Amps APT1004R2KN 3.5 Amps APT1004RKN 14.4 Amps APT1004R2KN 14.0 Amps

1.3 Volts

0.8 1.65 3.3 µC Symbol Characteristic / Test Conditions / Part Number UNIT MAXTYPMIN Test Conditions / Part NumberSymbol Characteristic MIN TYP MAX UNIT 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein. ZθJC, THERMAL IMPEDANCE ( °C/W) 1.0 0.5 0.1 0.05 0.01 0.004 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-0036 Rev C D=0.5 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2